Melting point of wurtzite-type GaN crystal

K. Harafuji; T. Tsuchiya; K. Kawamura

doi:10.1002/pssc.200303476

Melting point of wurtzite-type GaN crystal

K. Harafuji, T. Tsuchiya, K. Kawamura

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

A two-phase molecular dynamic simulation of coexisting solid and liquid has been made for a wurtzite-type GaN crystal. The melting point is determined by examining the movement of the interface between solid and liquid during the calculation. The pressure dependence of the melting point is systematically obtained for the first time. The melting point T_m increases linearly with pressure P as T_m(K) = 2513 + 186 × P(GPa).

Original language	English
Pages (from-to)	2420-2423
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303476
Publication status	Published - 2003
Externally published	Yes
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: May 25 2003 → May 30 2003

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200303476

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@article{5f73340de2204635a61b8e8f368cd9cd,

title = "Melting point of wurtzite-type GaN crystal",

abstract = "A two-phase molecular dynamic simulation of coexisting solid and liquid has been made for a wurtzite-type GaN crystal. The melting point is determined by examining the movement of the interface between solid and liquid during the calculation. The pressure dependence of the melting point is systematically obtained for the first time. The melting point Tm increases linearly with pressure P as Tm(K) = 2513 + 186 × P(GPa).",

author = "K. Harafuji and T. Tsuchiya and K. Kawamura",

year = "2003",

doi = "10.1002/pssc.200303476",

language = "English",

pages = "2420--2423",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

number = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

}

TY - JOUR

T1 - Melting point of wurtzite-type GaN crystal

AU - Harafuji, K.

AU - Tsuchiya, T.

AU - Kawamura, K.

PY - 2003

Y1 - 2003

N2 - A two-phase molecular dynamic simulation of coexisting solid and liquid has been made for a wurtzite-type GaN crystal. The melting point is determined by examining the movement of the interface between solid and liquid during the calculation. The pressure dependence of the melting point is systematically obtained for the first time. The melting point Tm increases linearly with pressure P as Tm(K) = 2513 + 186 × P(GPa).

AB - A two-phase molecular dynamic simulation of coexisting solid and liquid has been made for a wurtzite-type GaN crystal. The melting point is determined by examining the movement of the interface between solid and liquid during the calculation. The pressure dependence of the melting point is systematically obtained for the first time. The melting point Tm increases linearly with pressure P as Tm(K) = 2513 + 186 × P(GPa).

UR - http://www.scopus.com/inward/record.url?scp=80054968798&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80054968798&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303476

DO - 10.1002/pssc.200303476

M3 - Conference article

AN - SCOPUS:80054968798

SN - 1610-1634

SP - 2420

EP - 2423

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -

Melting point of wurtzite-type GaN crystal

Abstract

ASJC Scopus subject areas

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