Metal-insulator transition at 50 k in (formula presented)

Y. Kubozono, Y. Takabayashi, S. Fujiki, S. Kashino

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Temperature dependence of electron spin resonance in (Formula presented) was studied in a temperature range from 2 to 350 K. It was shown that (Formula presented) was metallic above 50 K and had a metal-insulator transition at 50 K. The center frequency for the Hg(2) Raman mode in (Formula presented) at 298 K was close to those in the metallic (Formula presented) (Formula presented) and (Formula presented) while the linewidth was close to that in the metallic but nonsuperconducting (Formula presented) The Hg(2) mode showed a large blueshift and narrowing at 50 K. The center frequency and the linewidth in the low-temperature region from 50 K were almost the same as those in the insulating (Formula presented) and (Formula presented) which showed the metal-insulator transition at 50 K in (Formula presented) The origin of this metal-insulator transition was discussed in terms of the electron-phonon interaction (Jahn-Teller effect) and the electron-electron interaction (Mott-Hubbard picture).

Original languageEnglish
Pages (from-to)15062-15069
Number of pages8
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number23
DOIs
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Metal-insulator transition at 50 k in (formula presented)'. Together they form a unique fingerprint.

Cite this