Metal-insulator transition of VO2 thin films grown on TiO 2 (001) and (110) substrates

Y. Muraoka; Z. Hiroi

doi:10.1063/1.1446215

Metal-insulator transition of VO₂ thin films grown on TiO ₂ (001) and (110) substrates

Y. Muraoka, Z. Hiroi

Research output: Contribution to journal › Article › peer-review

489 Citations (Scopus)

Abstract

The effect of uniaxial stress along the c axis on the metal-insulator transition of VO₂ has been studied in the form of epitaxial thin films grown on TiO₂ (001) and (110) substrates. A large reduction in the transition temperature T_MI from 341 K for a single crystal to 300 K has been observed in the film on TiO₂ (001) where the c-axis length is compressed owing to an epitaxial stress, while the T_MI has been increased to 369 K in the film on TiO₂ (110) where the c-axis length is expanded. The correlation between the c-axis length and T_MI is suggested: the shorter c-axis length results in the lower T_MI.

Original language	English
Pages (from-to)	583-585
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	4
DOIs	https://doi.org/10.1063/1.1446215
Publication status	Published - Jan 28 2002
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1446215

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abstract = "The effect of uniaxial stress along the c axis on the metal-insulator transition of VO2 has been studied in the form of epitaxial thin films grown on TiO2 (001) and (110) substrates. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.",

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AB - The effect of uniaxial stress along the c axis on the metal-insulator transition of VO2 has been studied in the form of epitaxial thin films grown on TiO2 (001) and (110) substrates. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.

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Metal-insulator transition of VO₂ thin films grown on TiO ₂ (001) and (110) substrates

Abstract

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