Metal-semiconductor transition in novel layered oxychalcogenides

Kazumasa Horigane; Jun Akimitsu

doi:10.1016/j.stam.2005.11.013

Metal-semiconductor transition in novel layered oxychalcogenides

Kazumasa Horigane, Jun Akimitsu

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Magnetic and electrical properties were characterized for newly synthesized La_1-xSr_xOCuSe (0<x<0.25) and La _1-xBa_xOCuTe (0<x<0.3). Magnetic measurement showed paramagnetic behavior, but it did not obey the Curie-Weiss law, and an ordered phase was not observed down to 1.8 K in the Se and Te systems. The electrical properties of La_1-xSr_xOCuSe indicated a metal-semiconductor transition at approximately x=0.05 and a metallic state of a higher concentration range x. The electrical conductivity of La _0.8Sr_0.2OCuSe was 209 S cm^-1 at room temperature. In La_1-xBa_xOCuTe, electrical resistivity systematically decreased with increasing x and semiconductive behavior was observed for all x values. Metal-semiconductor transition is probably caused by the degree of orientation and difference of acceptor levels in this system.

Original language	English
Pages (from-to)	6-8
Number of pages	3
Journal	Science and Technology of Advanced Materials
Volume	7
Issue number	1 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.stam.2005.11.013
Publication status	Published - Jan 2006
Externally published	Yes

Keywords

Electrical resistivity
Metal-semiconductor transition
Oxychalcogenide
Susceptibility

ASJC Scopus subject areas

Materials Science(all)

Access to Document

10.1016/j.stam.2005.11.013

Cite this

@article{543b22aed15643d98358bb4fe532dd5b,

title = "Metal-semiconductor transition in novel layered oxychalcogenides",

abstract = "Magnetic and electrical properties were characterized for newly synthesized La1-xSrxOCuSe (01-xBaxOCuTe (01-xSrxOCuSe indicated a metal-semiconductor transition at approximately x=0.05 and a metallic state of a higher concentration range x. The electrical conductivity of La 0.8Sr0.2OCuSe was 209 S cm-1 at room temperature. In La1-xBaxOCuTe, electrical resistivity systematically decreased with increasing x and semiconductive behavior was observed for all x values. Metal-semiconductor transition is probably caused by the degree of orientation and difference of acceptor levels in this system.",

keywords = "Electrical resistivity, Metal-semiconductor transition, Oxychalcogenide, Susceptibility",

author = "Kazumasa Horigane and Jun Akimitsu",

note = "Funding Information: This work was partly supported by the 21st COE program, {\textquoteleft}High-Tech Research Center{\textquoteright} Project for Private Universities: matching fund subsidy from MEXT (Ministry of Education, Culture, Sports, Science and Technology; 2002–2004), and a Grant-in-Aid for Scientific Research on Priority Area from the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

year = "2006",

month = jan,

doi = "10.1016/j.stam.2005.11.013",

language = "English",

volume = "7",

pages = "6--8",

journal = "Science and Technology of Advanced Materials",

issn = "1468-6996",

publisher = "IOP Publishing Ltd.",

number = "1 SPEC. ISS.",

}

TY - JOUR

T1 - Metal-semiconductor transition in novel layered oxychalcogenides

AU - Horigane, Kazumasa

AU - Akimitsu, Jun

N1 - Funding Information: This work was partly supported by the 21st COE program, ‘High-Tech Research Center’ Project for Private Universities: matching fund subsidy from MEXT (Ministry of Education, Culture, Sports, Science and Technology; 2002–2004), and a Grant-in-Aid for Scientific Research on Priority Area from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2006/1

Y1 - 2006/1

N2 - Magnetic and electrical properties were characterized for newly synthesized La1-xSrxOCuSe (01-xBaxOCuTe (01-xSrxOCuSe indicated a metal-semiconductor transition at approximately x=0.05 and a metallic state of a higher concentration range x. The electrical conductivity of La 0.8Sr0.2OCuSe was 209 S cm-1 at room temperature. In La1-xBaxOCuTe, electrical resistivity systematically decreased with increasing x and semiconductive behavior was observed for all x values. Metal-semiconductor transition is probably caused by the degree of orientation and difference of acceptor levels in this system.

AB - Magnetic and electrical properties were characterized for newly synthesized La1-xSrxOCuSe (01-xBaxOCuTe (01-xSrxOCuSe indicated a metal-semiconductor transition at approximately x=0.05 and a metallic state of a higher concentration range x. The electrical conductivity of La 0.8Sr0.2OCuSe was 209 S cm-1 at room temperature. In La1-xBaxOCuTe, electrical resistivity systematically decreased with increasing x and semiconductive behavior was observed for all x values. Metal-semiconductor transition is probably caused by the degree of orientation and difference of acceptor levels in this system.

KW - Electrical resistivity

KW - Metal-semiconductor transition

KW - Oxychalcogenide

KW - Susceptibility

UR - http://www.scopus.com/inward/record.url?scp=33644516914&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644516914&partnerID=8YFLogxK

U2 - 10.1016/j.stam.2005.11.013

DO - 10.1016/j.stam.2005.11.013

M3 - Article

AN - SCOPUS:33644516914

SN - 1468-6996

VL - 7

SP - 6

EP - 8

JO - Science and Technology of Advanced Materials

JF - Science and Technology of Advanced Materials

IS - 1 SPEC. ISS.

ER -

Metal-semiconductor transition in novel layered oxychalcogenides

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this