Modified SILAR Grown ZnO Films on p-Si(100) with Enhanced Charge Separation for UV Light Sensing Application

Jose Presiphil B. Ontolan, Junie Jhon M. Vequizo, Akira Yamakata, Reynaldo M. Vequizo

Research output: Contribution to journalArticlepeer-review


Herein, the growth of pristine ZnO nanostructures thin film on p-Si(100) by modified successive ionic layer adsorption-reduction method, revealing significant improvement in the charge collection for ultraviolet light detection, is reported. The deposited ZnO exhibits spindle-like and hexagonal structure that grows preferentially along the c-axis. Two-probe electrical measurements validate the rectifying nature of the constructed n-ZnO/p-Si(100), revealing a substantial 11.3-fold increase in photocurrent at room temperature under 375 nm irradiation at +3 V working voltage. The drastic increase in photocurrent is linked to efficient charge separation caused by charge transfer and band bending effects, as indicated by microsecond time-resolved absorption measurements, providing useful information for device development.

Original languageEnglish
Article number2100363
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number22
Publication statusPublished - Nov 2021
Externally publishedYes


  • efficient charge separation
  • modified SILAR method
  • n-ZnO/p-Si(100)
  • pristine ZnO thin films
  • p–n heterojunctions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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