TY - JOUR
T1 - Modified SILAR Grown ZnO Films on p-Si(100) with Enhanced Charge Separation for UV Light Sensing Application
AU - Ontolan, Jose Presiphil B.
AU - Vequizo, Junie Jhon M.
AU - Yamakata, Akira
AU - Vequizo, Reynaldo M.
N1 - Funding Information:
This work was supported by DOST-ASTHRDP Scholarship Grant 2015–2018, and 2018–2019 Research Enrichment Program (Sandwich Program). J.P.B.O. would also like to express his gratitude to the Quantum Interface Laboratory, Toyota Technological Institute for sample characterizations, and Professor Hiroyuki Sakaki, the previous TTI president, for authorizing his 6-month internship at TTI. Professor Masaya Ichimura and Yukihisa Moriguchi of Nagoya Institute of Technology's Department of Electrical and Mechanical Engineering are also commended for their contributions to the study and the XPS measurements, respectively.
Funding Information:
This work was supported by DOST‐ASTHRDP Scholarship Grant 2015–2018, and 2018–2019 Research Enrichment Program (Sandwich Program). J.P.B.O. would also like to express his gratitude to the Quantum Interface Laboratory, Toyota Technological Institute for sample characterizations, and Professor Hiroyuki Sakaki, the previous TTI president, for authorizing his 6‐month internship at TTI. Professor Masaya Ichimura and Yukihisa Moriguchi of Nagoya Institute of Technology's Department of Electrical and Mechanical Engineering are also commended for their contributions to the study and the XPS measurements, respectively.
Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021/11
Y1 - 2021/11
N2 - Herein, the growth of pristine ZnO nanostructures thin film on p-Si(100) by modified successive ionic layer adsorption-reduction method, revealing significant improvement in the charge collection for ultraviolet light detection, is reported. The deposited ZnO exhibits spindle-like and hexagonal structure that grows preferentially along the c-axis. Two-probe electrical measurements validate the rectifying nature of the constructed n-ZnO/p-Si(100), revealing a substantial 11.3-fold increase in photocurrent at room temperature under 375 nm irradiation at +3 V working voltage. The drastic increase in photocurrent is linked to efficient charge separation caused by charge transfer and band bending effects, as indicated by microsecond time-resolved absorption measurements, providing useful information for device development.
AB - Herein, the growth of pristine ZnO nanostructures thin film on p-Si(100) by modified successive ionic layer adsorption-reduction method, revealing significant improvement in the charge collection for ultraviolet light detection, is reported. The deposited ZnO exhibits spindle-like and hexagonal structure that grows preferentially along the c-axis. Two-probe electrical measurements validate the rectifying nature of the constructed n-ZnO/p-Si(100), revealing a substantial 11.3-fold increase in photocurrent at room temperature under 375 nm irradiation at +3 V working voltage. The drastic increase in photocurrent is linked to efficient charge separation caused by charge transfer and band bending effects, as indicated by microsecond time-resolved absorption measurements, providing useful information for device development.
KW - efficient charge separation
KW - modified SILAR method
KW - n-ZnO/p-Si(100)
KW - pristine ZnO thin films
KW - p–n heterojunctions
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U2 - 10.1002/pssa.202100363
DO - 10.1002/pssa.202100363
M3 - Article
AN - SCOPUS:85117172485
SN - 1862-6300
VL - 218
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 22
M1 - 2100363
ER -