Molecular dynamics simulation for evaluating melting point of wurtzite-type GaN crystal

The melting point of wurtzite-type GaN crystals was investigated by a two-phase molecular dynamics (MD) simulation of coexisting solid and liquid. The movement of the interface between the solid and liquid was examined to determine the melting point during the simulation. The initial solid crystal melts at 3200 K when the solid temperature is increased. It was found that the initial amorphous state at high temperature was maintained up to 300 K when the liquid was gradually cooled.