Molecular dynamics simulation of dislocations in wurtzlte-type GaN crystal

Kenji Harafuji, Taku Tsuchiya, Katsuyuki Kawamura

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


The microscopic dislocation structures in wurtzite-type GaN crystals were examined by performing a series of molecular dynamics (MD) simulations. The potential was a two-body interatomic one composed of the long-range Coulomb interaction, the Gilbert-type short-range repulsion, the covalent bonding and covalent repulsion of the modified Morse type and the van der Waals interaction. A dislocation was generated by the coalescence of the facing planes of a semi-infinite trench structure in the crystal. The core structure with an eightfold ring was confirmed for edge dislocations along the C direction, though there were a few atoms which were shifted from the core ring structure.

Original languageEnglish
Pages (from-to)2513-2524
Number of pages12
JournalJournal of Applied Physics
Issue number5
Publication statusPublished - Sept 1 2004
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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