TY - GEN
T1 - Molecular dynamics study on dielectric properties of silicon oxynitride
T2 - Composition and microstructure dependence
AU - Tomita, Munemasa
AU - Tsuruta, Kenji
PY - 2011
Y1 - 2011
N2 - Extra-long molecular-dynamics simulations are performed to study the interplay between dielectric properties and microstructures of silicon oxynitride. We quantitatively obtained the ionic permittivity and its linear dependence on nitrogen concentration. Analyses on microstructure of the oxynitride show that, as the N concentration increases, N atoms enter Si-O networks creating smaller-sized rings. While overall tendency of dielectric constant is monotonic increase on the N concentration, microscopic characteristics, such as local displacement of atoms, are strongly depend on local bonding environments.
AB - Extra-long molecular-dynamics simulations are performed to study the interplay between dielectric properties and microstructures of silicon oxynitride. We quantitatively obtained the ionic permittivity and its linear dependence on nitrogen concentration. Analyses on microstructure of the oxynitride show that, as the N concentration increases, N atoms enter Si-O networks creating smaller-sized rings. While overall tendency of dielectric constant is monotonic increase on the N concentration, microscopic characteristics, such as local displacement of atoms, are strongly depend on local bonding environments.
KW - Dielectric property
KW - Molecular dynamics
KW - Silicon oxynitride
UR - http://www.scopus.com/inward/record.url?scp=79960578307&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79960578307&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.485.287
DO - 10.4028/www.scientific.net/KEM.485.287
M3 - Conference contribution
AN - SCOPUS:79960578307
SN - 9783037851821
T3 - Key Engineering Materials
SP - 287
EP - 290
BT - Electroceramics in Japan XIV
PB - Trans Tech Publications Ltd
ER -