Monolithic pixel detector in a 0.15μm SOI technology

Y. Arai; M. Hazumi; Y. Ikegami; T. Kohriki; O. Tajima; S. Terada; T. Tsuboyama; Y. Unno; H. Ushiroda; H. Ikeda; K. Hara; H. Ishino; T. Kawasaki; E. Martin; G. Varner; H. Tajima; M. Ohno; K. Fukuda; H. Komatsubara; J. Ida; H. Hayashi

doi:10.1109/NSSMIC.2006.354171

Monolithic pixel detector in a 0.15μm SOI technology

Y. Arai, M. Hazumi, Y. Ikegami, T. Kohriki, O. Tajima, S. Terada, T. Tsuboyama, Y. Unno, H. Ushiroda, H. Ikeda, K. Hara, H. Ishino, T. Kawasaki, E. Martin, G. Varner, H. Tajima, M. Ohno, K. Fukuda, H. Komatsubara, J. IdaH. Hayashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

24 Citations (Scopus)

Abstract

We describe a new pixel detector development project using a 0.15 μm fully-depleted CMOS SOI (Silicon-On-Insulator) technology. Additional processing steps for creating substrate implants and contacts to form sensor and electrode connections were developed for this SOI process. A diode Test Element Group and several test chips have been fabricated and evaluated. The pixel detectors are successfully operated and first images are taken and sensibility to β-rays is confirmed. Back gate effects on the top circuits are observed and discussed.

Original language	English
Title of host publication	2006 IEEE Nuclear Science Symposium - Conference Record
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1440-1444
Number of pages	5
ISBN (Print)	1424405610, 9781424405619
DOIs	https://doi.org/10.1109/NSSMIC.2006.354171
Publication status	Published - 2006
Externally published	Yes
Event	2006 IEEE Nuclear Science Symposium, Medical Imaging Conference and 15th International Workshop on Room-Temperature Semiconductor X- and Gamma-Ray Detectors, Special Focus Workshops, NSS/MIC/RTSD - San Diego, CA, United States Duration: Oct 29 2006 → Nov 4 2006

Publication series

Name	IEEE Nuclear Science Symposium Conference Record
Volume	3
ISSN (Print)	1095-7863

Other

Other	2006 IEEE Nuclear Science Symposium, Medical Imaging Conference and 15th International Workshop on Room-Temperature Semiconductor X- and Gamma-Ray Detectors, Special Focus Workshops, NSS/MIC/RTSD
Country/Territory	United States
City	San Diego, CA
Period	10/29/06 → 11/4/06

ASJC Scopus subject areas

Radiation
Nuclear and High Energy Physics
Radiology Nuclear Medicine and imaging

Access to Document

10.1109/NSSMIC.2006.354171

Cite this

Arai, Y., Hazumi, M., Ikegami, Y., Kohriki, T., Tajima, O., Terada, S., Tsuboyama, T., Unno, Y., Ushiroda, H., Ikeda, H., Hara, K., Ishino, H., Kawasaki, T., Martin, E., Varner, G., Tajima, H., Ohno, M., Fukuda, K., Komatsubara, H., ... Hayashi, H. (2006). Monolithic pixel detector in a 0.15μm SOI technology. In 2006 IEEE Nuclear Science Symposium - Conference Record (pp. 1440-1444). Article 4179284 (IEEE Nuclear Science Symposium Conference Record; Vol. 3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NSSMIC.2006.354171

Monolithic pixel detector in a 0.15μm SOI technology. / Arai, Y.; Hazumi, M.; Ikegami, Y. et al.
2006 IEEE Nuclear Science Symposium - Conference Record. Institute of Electrical and Electronics Engineers Inc., 2006. p. 1440-1444 4179284 (IEEE Nuclear Science Symposium Conference Record; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Arai, Y, Hazumi, M, Ikegami, Y, Kohriki, T, Tajima, O, Terada, S, Tsuboyama, T, Unno, Y, Ushiroda, H, Ikeda, H, Hara, K, Ishino, H, Kawasaki, T, Martin, E, Varner, G, Tajima, H, Ohno, M, Fukuda, K, Komatsubara, H, Ida, J & Hayashi, H 2006, Monolithic pixel detector in a 0.15μm SOI technology. in 2006 IEEE Nuclear Science Symposium - Conference Record., 4179284, IEEE Nuclear Science Symposium Conference Record, vol. 3, Institute of Electrical and Electronics Engineers Inc., pp. 1440-1444, 2006 IEEE Nuclear Science Symposium, Medical Imaging Conference and 15th International Workshop on Room-Temperature Semiconductor X- and Gamma-Ray Detectors, Special Focus Workshops, NSS/MIC/RTSD, San Diego, CA, United States, 10/29/06. https://doi.org/10.1109/NSSMIC.2006.354171

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title = "Monolithic pixel detector in a 0.15μm SOI technology",

abstract = "We describe a new pixel detector development project using a 0.15 μm fully-depleted CMOS SOI (Silicon-On-Insulator) technology. Additional processing steps for creating substrate implants and contacts to form sensor and electrode connections were developed for this SOI process. A diode Test Element Group and several test chips have been fabricated and evaluated. The pixel detectors are successfully operated and first images are taken and sensibility to β-rays is confirmed. Back gate effects on the top circuits are observed and discussed.",

author = "Y. Arai and M. Hazumi and Y. Ikegami and T. Kohriki and O. Tajima and S. Terada and T. Tsuboyama and Y. Unno and H. Ushiroda and H. Ikeda and K. Hara and H. Ishino and T. Kawasaki and E. Martin and G. Varner and H. Tajima and M. Ohno and K. Fukuda and H. Komatsubara and J. Ida and H. Hayashi",

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note = "2006 IEEE Nuclear Science Symposium, Medical Imaging Conference and 15th International Workshop on Room-Temperature Semiconductor X- and Gamma-Ray Detectors, Special Focus Workshops, NSS/MIC/RTSD ; Conference date: 29-10-2006 Through 04-11-2006",

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AU - Arai, Y.

AU - Hazumi, M.

AU - Ikegami, Y.

AU - Kohriki, T.

AU - Tajima, O.

AU - Terada, S.

AU - Tsuboyama, T.

AU - Unno, Y.

AU - Ushiroda, H.

AU - Ikeda, H.

AU - Hara, K.

AU - Ishino, H.

AU - Kawasaki, T.

AU - Martin, E.

AU - Varner, G.

AU - Tajima, H.

AU - Ohno, M.

AU - Fukuda, K.

AU - Komatsubara, H.

AU - Ida, J.

AU - Hayashi, H.

PY - 2006

Y1 - 2006

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AB - We describe a new pixel detector development project using a 0.15 μm fully-depleted CMOS SOI (Silicon-On-Insulator) technology. Additional processing steps for creating substrate implants and contacts to form sensor and electrode connections were developed for this SOI process. A diode Test Element Group and several test chips have been fabricated and evaluated. The pixel detectors are successfully operated and first images are taken and sensibility to β-rays is confirmed. Back gate effects on the top circuits are observed and discussed.

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Y2 - 29 October 2006 through 4 November 2006

ER -

Monolithic pixel detector in a 0.15μm SOI technology

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