Multi-gate single-electron transistor and its application to an exclusive-OR gate

Yasuo Takahashi; Akira Fujiwara; Kenji Yamazaki; Hideo Namatsu; Kenji Kurihara; Katsumi Murase

Multi-gate single-electron transistor and its application to an exclusive-OR gate

Yasuo Takahashi, Akira Fujiwara, Kenji Yamazaki, Hideo Namatsu, Kenji Kurihara, Katsumi Murase

Faculty of Engineering

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

The two-input exclusive-OR (XOR) gate function was implemented by a multi-gate single-electron transistor. Two types of devices with different gate configurations were fabricated and tested. XOR operations were successfully performed through current switching at 40 K. The device has striking features for reducing the number of devices in logic circuits.

Original language	English
Pages (from-to)	127-130
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - Dec 1 1998
Event	Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: Dec 6 1998 → Dec 9 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Multi-gate single-electron transistor and its application to an exclusive-OR gate",

abstract = "The two-input exclusive-OR (XOR) gate function was implemented by a multi-gate single-electron transistor. Two types of devices with different gate configurations were fabricated and tested. XOR operations were successfully performed through current switching at 40 K. The device has striking features for reducing the number of devices in logic circuits.",

author = "Yasuo Takahashi and Akira Fujiwara and Kenji Yamazaki and Hideo Namatsu and Kenji Kurihara and Katsumi Murase",

year = "1998",

month = dec,

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language = "English",

pages = "127--130",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",

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TY - JOUR

T1 - Multi-gate single-electron transistor and its application to an exclusive-OR gate

AU - Takahashi, Yasuo

AU - Fujiwara, Akira

AU - Yamazaki, Kenji

AU - Namatsu, Hideo

AU - Kurihara, Kenji

AU - Murase, Katsumi

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The two-input exclusive-OR (XOR) gate function was implemented by a multi-gate single-electron transistor. Two types of devices with different gate configurations were fabricated and tested. XOR operations were successfully performed through current switching at 40 K. The device has striking features for reducing the number of devices in logic circuits.

AB - The two-input exclusive-OR (XOR) gate function was implemented by a multi-gate single-electron transistor. Two types of devices with different gate configurations were fabricated and tested. XOR operations were successfully performed through current switching at 40 K. The device has striking features for reducing the number of devices in logic circuits.

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M3 - Conference article

AN - SCOPUS:0032254711

SN - 0163-1918

SP - 127

EP - 130

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1998 IEEE International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -

Multi-gate single-electron transistor and its application to an exclusive-OR gate

Abstract

ASJC Scopus subject areas

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