TY - JOUR
T1 - Multifunctional one-dimensional rhodium(I)-semiquinonato complex
T2 - Substituent effects on crystal structures and solid-state properties
AU - Mitsumi, Minoru
AU - Ohtake, Shoji
AU - Kakuno, Yuki
AU - Komatsu, Yuuki
AU - Ozawa, Yoshiki
AU - Toriumi, Koshiro
AU - Yasuda, Nobuhiro
AU - Azuma, Nobuaki
AU - Miyazaki, Yuji
N1 - Publisher Copyright:
© 2014 American Chemical Society.
PY - 2014/11/3
Y1 - 2014/11/3
N2 - Two new one-dimensional (1D) rhodium(I)-semiquinonato complexes formulated as [Rh(3,6-DBSQ-4,5-PDO)(CO)2]- (4; 3,6-DBSQ-4,5-PDO•- = 3,6-di-tert-butyl-4,5-(1,3-propanedioxy)-1,2-benzosemiquinonato) and [Rh(3,6-DBSQ-4,5-(N,N′-DEN))(CO)2]- (5; 3,6-DBSQ-4,5-(N,N′-DEN)•- = 3,6-di-tert-butyl-4,5-(N,N′-diethylenediamine)-1,2-benzosemiquinonato) were synthesized to explore the nature of the unusual structural phase transition and magnetic and conductive properties recently reported for [Rh(3,6-DBSQ-4,5-(MeO)2)(CO)2]- (3; 3,6-DBSQ-4,5-(MeO)2•- = 3,6-di-tert-butyl-4,5-dimethoxy-1,2-benzosemiquinonato). Their crystal structures and magnetic and conductive properties were investigated. Compounds 4 and 5 comprise neutral 1D chains of complex molecules stacked in a staggered arrangement with fairly short average Rh-Rh distances of 3.06 Å for 4 and 3.10 Å for 5. These distances are similar to those for 3 (3.09 Å); however, the molecules of 5 are strongly dimerized in the 1D chain. Compound 4 undergoes a first-order phase transition at Ttrs = 229.1 K, and its magnetic properties drastically change from antiferromagnetic coupling in the roomerature (RT) phase to strong ferromagnetic coupling in the lowerature (LT) phase. In addition, compound 4 exhibits a long-range ordering of net magnetic moments originating from the imperfect cancellation of antiferromagnetically coupled spins between the ferromagnetic 1D chains at TN = 10.9 K. Furthermore, this compound exhibits an interesting crossover from a semiconductor with a small activation energy (Ea = 31 meV) in the RT phase to a semiconductor with a large activation energy (Ea = 199 meV) in the LT phase. These behaviors are commonly observed for 3. Alternating current susceptibility measurements of 4, however, revealed a frequency-dependent phenomenon below 5.2 K, which was not observed for 3, thus indicating a slow spin relaxation process that possibly arises from the movements of domain walls. In contrast, compound 5, which possesses a strongly dimerized structure in its 1D chain, shows no sign of strong ferromagnetic interactions and is an insulator, with a resistivity greater than 7 × 107 ω cm.
AB - Two new one-dimensional (1D) rhodium(I)-semiquinonato complexes formulated as [Rh(3,6-DBSQ-4,5-PDO)(CO)2]- (4; 3,6-DBSQ-4,5-PDO•- = 3,6-di-tert-butyl-4,5-(1,3-propanedioxy)-1,2-benzosemiquinonato) and [Rh(3,6-DBSQ-4,5-(N,N′-DEN))(CO)2]- (5; 3,6-DBSQ-4,5-(N,N′-DEN)•- = 3,6-di-tert-butyl-4,5-(N,N′-diethylenediamine)-1,2-benzosemiquinonato) were synthesized to explore the nature of the unusual structural phase transition and magnetic and conductive properties recently reported for [Rh(3,6-DBSQ-4,5-(MeO)2)(CO)2]- (3; 3,6-DBSQ-4,5-(MeO)2•- = 3,6-di-tert-butyl-4,5-dimethoxy-1,2-benzosemiquinonato). Their crystal structures and magnetic and conductive properties were investigated. Compounds 4 and 5 comprise neutral 1D chains of complex molecules stacked in a staggered arrangement with fairly short average Rh-Rh distances of 3.06 Å for 4 and 3.10 Å for 5. These distances are similar to those for 3 (3.09 Å); however, the molecules of 5 are strongly dimerized in the 1D chain. Compound 4 undergoes a first-order phase transition at Ttrs = 229.1 K, and its magnetic properties drastically change from antiferromagnetic coupling in the roomerature (RT) phase to strong ferromagnetic coupling in the lowerature (LT) phase. In addition, compound 4 exhibits a long-range ordering of net magnetic moments originating from the imperfect cancellation of antiferromagnetically coupled spins between the ferromagnetic 1D chains at TN = 10.9 K. Furthermore, this compound exhibits an interesting crossover from a semiconductor with a small activation energy (Ea = 31 meV) in the RT phase to a semiconductor with a large activation energy (Ea = 199 meV) in the LT phase. These behaviors are commonly observed for 3. Alternating current susceptibility measurements of 4, however, revealed a frequency-dependent phenomenon below 5.2 K, which was not observed for 3, thus indicating a slow spin relaxation process that possibly arises from the movements of domain walls. In contrast, compound 5, which possesses a strongly dimerized structure in its 1D chain, shows no sign of strong ferromagnetic interactions and is an insulator, with a resistivity greater than 7 × 107 ω cm.
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U2 - 10.1021/ic5019532
DO - 10.1021/ic5019532
M3 - Article
AN - SCOPUS:84908631982
SN - 0020-1669
VL - 53
SP - 11710
EP - 11720
JO - Inorganic Chemistry
JF - Inorganic Chemistry
IS - 21
ER -