Non-contact measurement of MOSFET with zero bias voltage using the Laser-THz emission microscope

Masatsugu Yamashita; Toshihiko Kiwa; Masayoshi Tonouchi; Kiyoshi Nikawa; Chiko Otani; Kodo Kawase

Non-contact measurement of MOSFET with zero bias voltage using the Laser-THz emission microscope

Masatsugu Yamashita, Toshihiko Kiwa, Masayoshi Tonouchi, Kiyoshi Nikawa, Chiko Otani, Kodo Kawase

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

For inspecting electrical failures in large-scale integration (LSI) circuits, we developed the laser-THz emission microscope (LTEM), which records the map of THz emission amplitude in a sample upon excitation with fs laser pulses. We successfully observed the THz emission image of MOSFETs embedded in a test element group under zero bias voltage. This result suggests that the LTEM can be used not only for the defect localization in LSI failure analysis but also as in-line inspection and monitoring.

Original language	English
Title of host publication	Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics
Editors	M. Thumm, W. Wiesbeck
Pages	515-516
Number of pages	2
Publication status	Published - Dec 1 2004
Event	Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics - Karlsruhe, Germany Duration: Sept 27 2004 → Oct 1 2004

Publication series

Name	Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics

Other

Other	Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics
Country/Territory	Germany
City	Karlsruhe
Period	9/27/04 → 10/1/04

ASJC Scopus subject areas

Engineering(all)

Cite this

Yamashita, M., Kiwa, T., Tonouchi, M., Nikawa, K., Otani, C., & Kawase, K. (2004). Non-contact measurement of MOSFET with zero bias voltage using the Laser-THz emission microscope. In M. Thumm, & W. Wiesbeck (Eds.), Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics (pp. 515-516). (Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics).

Non-contact measurement of MOSFET with zero bias voltage using the Laser-THz emission microscope. / Yamashita, Masatsugu; Kiwa, Toshihiko; Tonouchi, Masayoshi et al.
Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics. ed. / M. Thumm; W. Wiesbeck. 2004. p. 515-516 (Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamashita, M, Kiwa, T, Tonouchi, M, Nikawa, K, Otani, C & Kawase, K 2004, Non-contact measurement of MOSFET with zero bias voltage using the Laser-THz emission microscope. in M Thumm & W Wiesbeck (eds), Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics. Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics, pp. 515-516, Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics, Karlsruhe, Germany, 9/27/04.

Yamashita M, Kiwa T, Tonouchi M, Nikawa K, Otani C, Kawase K. Non-contact measurement of MOSFET with zero bias voltage using the Laser-THz emission microscope. In Thumm M, Wiesbeck W, editors, Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics. 2004. p. 515-516. (Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics).

Yamashita, Masatsugu ; Kiwa, Toshihiko ; Tonouchi, Masayoshi et al. / Non-contact measurement of MOSFET with zero bias voltage using the Laser-THz emission microscope. Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics. editor / M. Thumm ; W. Wiesbeck. 2004. pp. 515-516 (Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics).

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abstract = "For inspecting electrical failures in large-scale integration (LSI) circuits, we developed the laser-THz emission microscope (LTEM), which records the map of THz emission amplitude in a sample upon excitation with fs laser pulses. We successfully observed the THz emission image of MOSFETs embedded in a test element group under zero bias voltage. This result suggests that the LTEM can be used not only for the defect localization in LSI failure analysis but also as in-line inspection and monitoring.",

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AU - Otani, Chiko

AU - Kawase, Kodo

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AB - For inspecting electrical failures in large-scale integration (LSI) circuits, we developed the laser-THz emission microscope (LTEM), which records the map of THz emission amplitude in a sample upon excitation with fs laser pulses. We successfully observed the THz emission image of MOSFETs embedded in a test element group under zero bias voltage. This result suggests that the LTEM can be used not only for the defect localization in LSI failure analysis but also as in-line inspection and monitoring.

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Non-contact measurement of MOSFET with zero bias voltage using the Laser-THz emission microscope

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