Non-volatile organic memory with sub-millimetre bending radius

Richard Hahnkee Kim, Hae Jin Kim, Insung Bae, Sun Kak Hwang, Dhinesh Babu Velusamy, Suk Man Cho, Kazuto Takaishi, Tsuyoshi Muto, Daisuke Hashizume, Masanobu Uchiyama, Pascal André, Fabrice Mathevet, Benoit Heinrich, Tetsuya Aoyama, Dae Eun Kim, Hyungsuk Lee, Jean Charles Ribierre, Cheolmin Park

Research output: Contribution to journalArticlepeer-review

200 Citations (Scopus)


High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

Original languageEnglish
Article number3583
JournalNature Communications
Publication statusPublished - Apr 8 2014
Externally publishedYes

ASJC Scopus subject areas

  • Biochemistry, Genetics and Molecular Biology(all)
  • Chemistry(all)
  • Physics and Astronomy(all)


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