Optical properties of indium-doped ZnO films

Yongge Cao, Lei Miao, Sakae Tanemura, Masaki Tanemura, Yohei Kuno, Yasuhiko Hayashi, Yukimasa Mori

Research output: Contribution to journalArticlepeer-review

61 Citations (Scopus)


Indium-doped ZnO (IZO) films with low In content (<6at. %) were fabricated by rf helicon magnetron sputtering. The uniformity of the composites was confirmed by elemental analysis. The formation of an In-Zn-O solid solution was verified using X-ray diffraction (XRD) patterns. A wide, high-transmittance region (400-2000nm) and >80% transmittance in the window of fiber optics telecommunication (1.30-1.55 urn) were observed. The incorporation of indium enhances the optical transmission in the designated visible and infrared wavelengths. The optical band gap shows a slight blue-shift with increasing In doping which can be explained by the Burstein-Moss effect. The Urbach tail parameter E0 increases with increasing indium content, which coincides with the increase in the full width half maximum (FWHM) of (0002) planes in XRD patterns. A decline in crystal quality with In incorporation in IZO films is also confirmed from photoluminescence (PL) spectra.

Original languageEnglish
Pages (from-to)1623-1628
Number of pages6
JournalJapanese Journal of Applied Physics
Issue number3 A
Publication statusPublished - Mar 8 2006
Externally publishedYes


  • Indium zinc oxide
  • Magnetron sputtering
  • Optical transmittance
  • Photoluminescence spectra
  • Thin film

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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