Optical response in amorphous GaAs thin films prepared by pulsed laser deposition

Toshihiko Kiwa; Ichiro Kawashima; Shigeki Nashima; Masanori Hangyo; Masayoshi Tonouchi

Optical response in amorphous GaAs thin films prepared by pulsed laser deposition

Toshihiko Kiwa, Ichiro Kawashima, Shigeki Nashima, Masanori Hangyo, Masayoshi Tonouchi

Research output: Contribution to journal › Article › peer-review

Abstract

Femtosecond optical response in GaAs thin films has been studied. We prepared GaAs thin films on MgO substrates and on YBa₂Cu₃O_7-δ (YBCO) thin films using pulsed laser deposition (PLD) at temperatures below 250 °C. A photocarrier lifetime of less than 1 ps is measured for the prepared GaAs thin films using femtosecond time-domain reflectivity change measurements. Pulsed electromagnetic wave [terahertz (THz) radiation] containing a frequency component of up to 1 THz is emitted from fabricated photoconductive switches using the prepared thin films. We also evaluated the THz radiation properties emitted from the photoswitches on the YBCO thin films.

Original language	English
Pages (from-to)	6304-6308
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	11
Publication status	Published - Nov 1 2000
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Cite this

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title = "Optical response in amorphous GaAs thin films prepared by pulsed laser deposition",

abstract = "Femtosecond optical response in GaAs thin films has been studied. We prepared GaAs thin films on MgO substrates and on YBa2Cu3O7-δ (YBCO) thin films using pulsed laser deposition (PLD) at temperatures below 250 °C. A photocarrier lifetime of less than 1 ps is measured for the prepared GaAs thin films using femtosecond time-domain reflectivity change measurements. Pulsed electromagnetic wave [terahertz (THz) radiation] containing a frequency component of up to 1 THz is emitted from fabricated photoconductive switches using the prepared thin films. We also evaluated the THz radiation properties emitted from the photoswitches on the YBCO thin films.",

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T1 - Optical response in amorphous GaAs thin films prepared by pulsed laser deposition

AU - Kiwa, Toshihiko

AU - Kawashima, Ichiro

AU - Nashima, Shigeki

AU - Hangyo, Masanori

AU - Tonouchi, Masayoshi

PY - 2000/11/1

Y1 - 2000/11/1

N2 - Femtosecond optical response in GaAs thin films has been studied. We prepared GaAs thin films on MgO substrates and on YBa2Cu3O7-δ (YBCO) thin films using pulsed laser deposition (PLD) at temperatures below 250 °C. A photocarrier lifetime of less than 1 ps is measured for the prepared GaAs thin films using femtosecond time-domain reflectivity change measurements. Pulsed electromagnetic wave [terahertz (THz) radiation] containing a frequency component of up to 1 THz is emitted from fabricated photoconductive switches using the prepared thin films. We also evaluated the THz radiation properties emitted from the photoswitches on the YBCO thin films.

AB - Femtosecond optical response in GaAs thin films has been studied. We prepared GaAs thin films on MgO substrates and on YBa2Cu3O7-δ (YBCO) thin films using pulsed laser deposition (PLD) at temperatures below 250 °C. A photocarrier lifetime of less than 1 ps is measured for the prepared GaAs thin films using femtosecond time-domain reflectivity change measurements. Pulsed electromagnetic wave [terahertz (THz) radiation] containing a frequency component of up to 1 THz is emitted from fabricated photoconductive switches using the prepared thin films. We also evaluated the THz radiation properties emitted from the photoswitches on the YBCO thin films.

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ER -

Optical response in amorphous GaAs thin films prepared by pulsed laser deposition

Abstract

ASJC Scopus subject areas

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