Optimizing picene molecular assembling by supersonic molecular beam deposition

Here we report an investigation of the growth of picene by supersonic molecular beam deposition on thermal silicon oxide and on a self-assembled monolayer of hexamethyldisiloxane (HMDS). In both cases film morphology shows a structure with very sharp island edges and well-separated islands which size and height depend on the deposition conditions. Picene films growth on bare silicon covered with hydrophobic HDMS shows islands characterized by large regular crystallites of several micrometers; on the other hand, films growth on silicon oxide shows smaller and thicker islands. We analyzed the details of the growth model and describe it as a balancing mechanism involving the weak interaction between molecules and surface and the strong picene-picene interaction that leads to a different Schwoebel-Ehrlich barrier in the first layer with respect to the successive one. Finally, we study the charge transport properties of these films by fabricating field-effect transistors devices in both top and bottom contact configuration. We notice that substrate influences the electrical properties of the device and we obtained a maximum mobility value of 1.2 cm² V^-1 s^-1 measured on top contact devices in air.