Origin of yellow luminescence in n-GaN induced by high-energy 7 MeV electron irradiation

Yasuhiko Hayashi, Tetsuo Soga, Masayoshi Umeno, Takashi Jimbo

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


The yellow luminescence band in high-energy 7 MeV electron-irradiated n-GaN is investigated as a function of electron irradiation dose. Both the yellow-band intensity and the near-bandedge photoluminescence (PL) intensity decrease continually with increasing electron irradiation dose. The decrease rate for the yellow-band intensity is less compared to the near-bandedge intensity; however, it is found that the ratio of the yellow-band intensity to the near-bandedge PL intensity increases with increasing electron irradiation dose. To interpret this phenomenon, a theoretical model is developed for the yellow-to-near-bandedge intensity ratio based on rate equations. The proposed model is in good agreement with the experimental observation. The electron spin resonance (ESR) and light-induced ESR (LESR) spectra are measured to investigate deep defects induced by electron irradiation. The ESR signal intensity at g = 1.9451 decreases with increasing electron irradiation dose and increases with the light-induced time.

Original languageEnglish
Pages (from-to)12-17
Number of pages6
JournalPhysica B: Condensed Matter
Issue number1-4
Publication statusPublished - Sept 2001
Externally publishedYes


  • Electron irradiation
  • GaN
  • Light-induced ESR
  • Photoluminescence
  • UV luminescence
  • Yellow luminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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