Performance improvement of a high-temperature stress sensor incorporated with flat pores through a solid state foaming method

Aiming for an application to the high temperature pressure sensor, semiconductive ceramics foam incorporated with a narrow slit has been fabricated by our innovated superplastically foaming method. We investigated the pressure dependence of resistance on the zinc oxide based foaming body, by changing the fabrication process and composition. The resistance of the sample decreased with an increase in pressure both at room and high temperatures. The performances of this type of sensor such as sensitivity and linearity have been improved by doping ambivalent atoms (Ag and Li) into the matrix.