TY - JOUR
T1 - Persistent insulator-to-metal transition of a VO2 thin film induced by soft X-ray irradiation
AU - Muraoka, Yuji
AU - Nagao, Hiroki
AU - Katayama, Shinsuke
AU - Wakita, Takanori
AU - Hirai, Masaaki
AU - Yokoya, Takayoshi
AU - Kumigashira, Hiroshi
AU - Oshima, Masaharu
PY - 2014/5
Y1 - 2014/5
N2 - We present a persistent soft-X-ray-induced insulator-to-metal transition at room temperature for VO2 thin films. Continuous soft X-ray irradiation renders the insulating electronic state metallic in the VO 2 thin films, which has been found by photoemission spectroscopy measurement. The observed transition is irreversible and the metallic state persists when soft X-ray irradiation is stopped. The analysis of valence band spectra reveals that the density of states (DOS) of the V 3d band increases with irradiation time, while the DOS of the O 2p band decreases. We propose a simple model where the persistent insulator-to-metal transition is driven by oxygen desorption from VO2 thin films under soft X-ray irradiation. The present results will help in developing a new route for controlling the phase transition of VO2 by light.
AB - We present a persistent soft-X-ray-induced insulator-to-metal transition at room temperature for VO2 thin films. Continuous soft X-ray irradiation renders the insulating electronic state metallic in the VO 2 thin films, which has been found by photoemission spectroscopy measurement. The observed transition is irreversible and the metallic state persists when soft X-ray irradiation is stopped. The analysis of valence band spectra reveals that the density of states (DOS) of the V 3d band increases with irradiation time, while the DOS of the O 2p band decreases. We propose a simple model where the persistent insulator-to-metal transition is driven by oxygen desorption from VO2 thin films under soft X-ray irradiation. The present results will help in developing a new route for controlling the phase transition of VO2 by light.
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U2 - 10.7567/JJAP.53.05FB09
DO - 10.7567/JJAP.53.05FB09
M3 - Article
AN - SCOPUS:84903311035
SN - 0021-4922
VL - 53
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 5 SPEC. ISSUE 1
M1 - 05FB09
ER -