Photodiode operating at 2 μm wavelength using InGaAsN layer on InP substrate

Hideki Fukano; Manabu Mitsuhara; Yasuhiro Kondo

doi:10.1109/LEOS.2008.4688606

Photodiode operating at 2 μm wavelength using InGaAsN layer on InP substrate

Hideki Fukano, Manabu Mitsuhara, Yasuhiro Kondo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We report the growth and fabrication of a photodiode using InGaAsN on InP. A low residual carrier concentration is achieved using a low RF power plasma source. The fabricated photodiode has a 2.1-μm cutoff wavelength.

Original language	English
Title of host publication	21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
Pages	294-295
Number of pages	2
DOIs	https://doi.org/10.1109/LEOS.2008.4688606
Publication status	Published - Dec 1 2008
Externally published	Yes
Event	21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 - Newport Beach, CA, United States Duration: Nov 9 2008 → Nov 13 2008

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN (Print)	1092-8081

Other

Other	21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
Country/Territory	United States
City	Newport Beach, CA
Period	11/9/08 → 11/13/08

Keywords

InGaAsN
Metalorganic molecular beam epitaxy
Photodiode
RF plasma

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LEOS.2008.4688606

Cite this

Photodiode operating at 2 μm wavelength using InGaAsN layer on InP substrate. / Fukano, Hideki; Mitsuhara, Manabu; Kondo, Yasuhiro.
21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008. 2008. p. 294-295 4688606 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fukano, H, Mitsuhara, M & Kondo, Y 2008, Photodiode operating at 2 μm wavelength using InGaAsN layer on InP substrate. in 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008., 4688606, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, pp. 294-295, 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008, Newport Beach, CA, United States, 11/9/08. https://doi.org/10.1109/LEOS.2008.4688606

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title = "Photodiode operating at 2 μm wavelength using InGaAsN layer on InP substrate",

abstract = "We report the growth and fabrication of a photodiode using InGaAsN on InP. A low residual carrier concentration is achieved using a low RF power plasma source. The fabricated photodiode has a 2.1-μm cutoff wavelength.",

keywords = "InGaAsN, Metalorganic molecular beam epitaxy, Photodiode, RF plasma",

author = "Hideki Fukano and Manabu Mitsuhara and Yasuhiro Kondo",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/LEOS.2008.4688606",

language = "English",

isbn = "9781424419326",

series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

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booktitle = "21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008",

note = "21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 ; Conference date: 09-11-2008 Through 13-11-2008",

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AU - Fukano, Hideki

AU - Mitsuhara, Manabu

AU - Kondo, Yasuhiro

PY - 2008/12/1

Y1 - 2008/12/1

N2 - We report the growth and fabrication of a photodiode using InGaAsN on InP. A low residual carrier concentration is achieved using a low RF power plasma source. The fabricated photodiode has a 2.1-μm cutoff wavelength.

AB - We report the growth and fabrication of a photodiode using InGaAsN on InP. A low residual carrier concentration is achieved using a low RF power plasma source. The fabricated photodiode has a 2.1-μm cutoff wavelength.

KW - InGaAsN

KW - Metalorganic molecular beam epitaxy

KW - Photodiode

KW - RF plasma

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M3 - Conference contribution

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T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

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BT - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008

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Y2 - 9 November 2008 through 13 November 2008

ER -

Photodiode operating at 2 μm wavelength using InGaAsN layer on InP substrate

Abstract

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Keywords

ASJC Scopus subject areas

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