Photoemission spectroscopy of Ta 2NiSe 5

Y. Wakisaka, T. Sudayama, K. Takubo, T. Mizokawa, N. L. Saini, M. Arita, H. Namatame, M. Taniguchi, N. Katayama, M. Nohara, H. Takagi

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69 Citations (Scopus)


We report temperature-dependent angle-resolved photoemission spectroscopy measurement of Ta 2NiSe 5 which shows a semiconductor- semiconductor structural phase transition at around 330 K. Characteristically, flat band at the top of the valence band is observed, which is ascribed to the excitonic insulator effect. The top valence band shifts to higher binding energy and its bandwidth increases as the temperature decreases. As the system exceeds the transition temperature, the flat feature of the valence band weakens though the exciton fluctuations remain finite.

Original languageEnglish
Pages (from-to)1231-1234
Number of pages4
JournalJournal of Superconductivity and Novel Magnetism
Issue number5
Publication statusPublished - Jul 2012
Externally publishedYes


  • Excitonic insulator
  • Layered chalcogenide
  • Photoemission

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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