Photogenerated hole carrier injection to YBa2Cu 3O7-x in an oxide heterostructure

Y. Muraoka, T. Muramatsu, J. Yamaura, Z. Hiroi

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)


Hole doping in the YBa2Cu3O7-X in an oxide heterostructure was analyzed. The current-voltage and photovoltaic properties of YBa2Cu3O7-X were also observed under ultraviolet light irradiation at room temperature. The maximum surface hole carrier density injected was found to be 3.5*1013 cm-2 at L=44 mW/cm2. The results show that the photocarrier injection technique could be used in transition metal oxides to control the hole carrier density.

Original languageEnglish
Pages (from-to)2950-2952
Number of pages3
JournalApplied Physics Letters
Issue number14
Publication statusPublished - Oct 4 2004
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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