Photoluminescence of zincselenide single crystals annealed in zinc or selenium atmosphere

Kenji Yoshino; Yasushi Matsushima; Hiroyoshi Kinoshita; Makoto Hiramatsu

doi:10.1557/proc-348-533

Photoluminescence of zincselenide single crystals annealed in zinc or selenium atmosphere

Kenji Yoshino, Yasushi Matsushima, Hiroyoshi Kinoshita, Makoto Hiramatsu

School of Science

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Zincselenide single crystals grown by the sublimation method are annealed in Zn or Se atmosphere. The annealing effects are examined by means of photoluminescence (PL) and reflection spectroscopy at 4.2 K. In the PL spectrum for the as-grown crystal, bound exciton lines (I₂, I₁) are observed. For the Zn-annealed crystal, the free exciton line is clearly observed. For the Se-annealed crystal, peak positions of all lines shift to the higher energies and all lines become sharp, compared with the spectra for the as-grown crystal. It is concluded that Se-vacancies affect the bandgap energy more than Zn-vacancies do.

Original language	English
Pages (from-to)	533-538
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	348
DOIs	https://doi.org/10.1557/proc-348-533
Publication status	Published - 1994
Event	Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 8 1994

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Photoluminescence of zincselenide single crystals annealed in zinc or selenium atmosphere",

abstract = "Zincselenide single crystals grown by the sublimation method are annealed in Zn or Se atmosphere. The annealing effects are examined by means of photoluminescence (PL) and reflection spectroscopy at 4.2 K. In the PL spectrum for the as-grown crystal, bound exciton lines (I2, I1) are observed. For the Zn-annealed crystal, the free exciton line is clearly observed. For the Se-annealed crystal, peak positions of all lines shift to the higher energies and all lines become sharp, compared with the spectra for the as-grown crystal. It is concluded that Se-vacancies affect the bandgap energy more than Zn-vacancies do.",

author = "Kenji Yoshino and Yasushi Matsushima and Hiroyoshi Kinoshita and Makoto Hiramatsu",

year = "1994",

doi = "10.1557/proc-348-533",

language = "English",

volume = "348",

pages = "533--538",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Spring Meeting ; Conference date: 04-04-1994 Through 08-04-1994",

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TY - JOUR

T1 - Photoluminescence of zincselenide single crystals annealed in zinc or selenium atmosphere

AU - Yoshino, Kenji

AU - Matsushima, Yasushi

AU - Kinoshita, Hiroyoshi

AU - Hiramatsu, Makoto

PY - 1994

Y1 - 1994

N2 - Zincselenide single crystals grown by the sublimation method are annealed in Zn or Se atmosphere. The annealing effects are examined by means of photoluminescence (PL) and reflection spectroscopy at 4.2 K. In the PL spectrum for the as-grown crystal, bound exciton lines (I2, I1) are observed. For the Zn-annealed crystal, the free exciton line is clearly observed. For the Se-annealed crystal, peak positions of all lines shift to the higher energies and all lines become sharp, compared with the spectra for the as-grown crystal. It is concluded that Se-vacancies affect the bandgap energy more than Zn-vacancies do.

AB - Zincselenide single crystals grown by the sublimation method are annealed in Zn or Se atmosphere. The annealing effects are examined by means of photoluminescence (PL) and reflection spectroscopy at 4.2 K. In the PL spectrum for the as-grown crystal, bound exciton lines (I2, I1) are observed. For the Zn-annealed crystal, the free exciton line is clearly observed. For the Se-annealed crystal, peak positions of all lines shift to the higher energies and all lines become sharp, compared with the spectra for the as-grown crystal. It is concluded that Se-vacancies affect the bandgap energy more than Zn-vacancies do.

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DO - 10.1557/proc-348-533

M3 - Conference article

AN - SCOPUS:0028724735

SN - 0272-9172

VL - 348

SP - 533

EP - 538

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Spring Meeting

Y2 - 4 April 1994 through 8 April 1994

ER -

Photoluminescence of zincselenide single crystals annealed in zinc or selenium atmosphere

Abstract

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