Preparation and characterization of (001)- and (110)-oriented 0.6FeTi O3.0.4Fe2O3 films for room temperature magnetic semiconductors

Yusuke Takada; Makoto Nakanishi; Tatsuo Fujii; Jun Takada

doi:10.1063/1.2951589

Preparation and characterization of (001)- and (110)-oriented 0.6FeTi O₃.0.4Fe₂O₃ films for room temperature magnetic semiconductors

Yusuke Takada, Makoto Nakanishi, Tatsuo Fujii, Jun Takada

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Thin films of ilmenite-hematite solid solution 0.6FeTi O₃ 0.4 Fe₂O₃ were prepared on α- Al₂O ₃ (001) and (110) single-crystalline substrates. The oxide phases formed in the thin films strongly depended on the oxygen partial pressure (PO₂) during deposition. At PO₂ =1.3× 10 ^-3 Pa, regardless of thesubstrate orientation, well-ordered 0.6FeTi O₃ 0.4 Fe₂O₃ films with R 3- symmetry were epitaxially formed. Large saturation magnetization at room temperature was observed in both (001)- and (110)-oriented films. The differences in the magnetization and electrical resistivity curves between the (001)- and (110)-oriented films indicated the anisotropic nature of 0.6FeTi O₃ 0.4 Fe₂O₃.

Original language	English
Article number	252102
Journal	Applied Physics Letters
Volume	92
Issue number	25
DOIs	https://doi.org/10.1063/1.2951589
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Preparation and characterization of (001)- and (110)-oriented 0.6FeTi O3.0.4Fe2O3 films for room temperature magnetic semiconductors",

abstract = "Thin films of ilmenite-hematite solid solution 0.6FeTi O3 0.4 Fe2O3 were prepared on α- Al2O 3 (001) and (110) single-crystalline substrates. The oxide phases formed in the thin films strongly depended on the oxygen partial pressure (PO2) during deposition. At PO2 =1.3× 10 -3 Pa, regardless of thesubstrate orientation, well-ordered 0.6FeTi O3 0.4 Fe2O3 films with R 3- symmetry were epitaxially formed. Large saturation magnetization at room temperature was observed in both (001)- and (110)-oriented films. The differences in the magnetization and electrical resistivity curves between the (001)- and (110)-oriented films indicated the anisotropic nature of 0.6FeTi O3 0.4 Fe2O3.",

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AU - Takada, Yusuke

AU - Nakanishi, Makoto

AU - Fujii, Tatsuo

AU - Takada, Jun

PY - 2008

Y1 - 2008

N2 - Thin films of ilmenite-hematite solid solution 0.6FeTi O3 0.4 Fe2O3 were prepared on α- Al2O 3 (001) and (110) single-crystalline substrates. The oxide phases formed in the thin films strongly depended on the oxygen partial pressure (PO2) during deposition. At PO2 =1.3× 10 -3 Pa, regardless of thesubstrate orientation, well-ordered 0.6FeTi O3 0.4 Fe2O3 films with R 3- symmetry were epitaxially formed. Large saturation magnetization at room temperature was observed in both (001)- and (110)-oriented films. The differences in the magnetization and electrical resistivity curves between the (001)- and (110)-oriented films indicated the anisotropic nature of 0.6FeTi O3 0.4 Fe2O3.

AB - Thin films of ilmenite-hematite solid solution 0.6FeTi O3 0.4 Fe2O3 were prepared on α- Al2O 3 (001) and (110) single-crystalline substrates. The oxide phases formed in the thin films strongly depended on the oxygen partial pressure (PO2) during deposition. At PO2 =1.3× 10 -3 Pa, regardless of thesubstrate orientation, well-ordered 0.6FeTi O3 0.4 Fe2O3 films with R 3- symmetry were epitaxially formed. Large saturation magnetization at room temperature was observed in both (001)- and (110)-oriented films. The differences in the magnetization and electrical resistivity curves between the (001)- and (110)-oriented films indicated the anisotropic nature of 0.6FeTi O3 0.4 Fe2O3.

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Preparation and characterization of (001)- and (110)-oriented 0.6FeTi O₃.0.4Fe₂O₃ films for room temperature magnetic semiconductors

Abstract

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