Preparation of epitaxial Fe3-xTixO4 Solid Solution Films by Sputtering Method

Kazuhiro Nishimura; Masahiro Kitazono; Makoto Nakanishi; Tatsuo Fujii

doi:10.2497/jjspm.65.585

Preparation of epitaxial Fe_3-xTi_xO₄ Solid Solution Films by Sputtering Method

Kazuhiro Nishimura, Masahiro Kitazono, Makoto Nakanishi, Tatsuo Fujii

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Titanomagnetite solid solution Fe_3-xTi_xO₄ films have been prepared on α-Al₂O₃(0001) substrates by a reactive sputtering method. Nearly single phase of Fe_3-xTi_xO₄ with (111)-orientation was epitaxially formed on the substrate. The epitaxial relationship of Fe_3-xTi_xO₄ [110] (111) || α-Al₂O₃ [1100] (0001) was confirmed. All films with x < 0.6 exhibited ferrimagnetic property at room temperature. The saturation magnetization of the films showed systematic changes depending on the Ti concentration x. The Ti⁴⁺ ions in Fe_3-xTi_xO₄ can be expected to substitute for the octahedral Fe³⁺ ions by following the Néel-Chevallier model. The films had thermally activated semiconductor behavior and the electrical resistivity with exponentially increasing of the Ti concentration. Indirect optical band gap observed from an absorption spectroscopy also shows monotonical increase with the increasing of Ti concentration.

Original language	English
Pages (from-to)	585-588
Number of pages	4
Journal	Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Volume	65
Issue number	9
DOIs	https://doi.org/10.2497/jjspm.65.585
Publication status	Published - 2018

Keywords

FeTiO solid solution
Ferrimagnetic semiconductor
Sputtering method
Thin film

ASJC Scopus subject areas

Mechanical Engineering
Industrial and Manufacturing Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.2497/jjspm.65.585

Cite this

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title = "Preparation of epitaxial Fe3-xTixO4 Solid Solution Films by Sputtering Method",

abstract = "Titanomagnetite solid solution Fe3-xTixO4 films have been prepared on α-Al2O3(0001) substrates by a reactive sputtering method. Nearly single phase of Fe3-xTixO4 with (111)-orientation was epitaxially formed on the substrate. The epitaxial relationship of Fe3-xTixO4 [110] (111) || α-Al2O3 [1100] (0001) was confirmed. All films with x < 0.6 exhibited ferrimagnetic property at room temperature. The saturation magnetization of the films showed systematic changes depending on the Ti concentration x. The Ti4+ ions in Fe3-xTixO4 can be expected to substitute for the octahedral Fe3+ ions by following the N{\'e}el-Chevallier model. The films had thermally activated semiconductor behavior and the electrical resistivity with exponentially increasing of the Ti concentration. Indirect optical band gap observed from an absorption spectroscopy also shows monotonical increase with the increasing of Ti concentration.",

keywords = "FeTiO solid solution, Ferrimagnetic semiconductor, Sputtering method, Thin film",

author = "Kazuhiro Nishimura and Masahiro Kitazono and Makoto Nakanishi and Tatsuo Fujii",

year = "2018",

doi = "10.2497/jjspm.65.585",

language = "English",

volume = "65",

pages = "585--588",

journal = "Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy",

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T1 - Preparation of epitaxial Fe3-xTixO4 Solid Solution Films by Sputtering Method

AU - Nishimura, Kazuhiro

AU - Kitazono, Masahiro

AU - Nakanishi, Makoto

AU - Fujii, Tatsuo

PY - 2018

Y1 - 2018

N2 - Titanomagnetite solid solution Fe3-xTixO4 films have been prepared on α-Al2O3(0001) substrates by a reactive sputtering method. Nearly single phase of Fe3-xTixO4 with (111)-orientation was epitaxially formed on the substrate. The epitaxial relationship of Fe3-xTixO4 [110] (111) || α-Al2O3 [1100] (0001) was confirmed. All films with x < 0.6 exhibited ferrimagnetic property at room temperature. The saturation magnetization of the films showed systematic changes depending on the Ti concentration x. The Ti4+ ions in Fe3-xTixO4 can be expected to substitute for the octahedral Fe3+ ions by following the Néel-Chevallier model. The films had thermally activated semiconductor behavior and the electrical resistivity with exponentially increasing of the Ti concentration. Indirect optical band gap observed from an absorption spectroscopy also shows monotonical increase with the increasing of Ti concentration.

AB - Titanomagnetite solid solution Fe3-xTixO4 films have been prepared on α-Al2O3(0001) substrates by a reactive sputtering method. Nearly single phase of Fe3-xTixO4 with (111)-orientation was epitaxially formed on the substrate. The epitaxial relationship of Fe3-xTixO4 [110] (111) || α-Al2O3 [1100] (0001) was confirmed. All films with x < 0.6 exhibited ferrimagnetic property at room temperature. The saturation magnetization of the films showed systematic changes depending on the Ti concentration x. The Ti4+ ions in Fe3-xTixO4 can be expected to substitute for the octahedral Fe3+ ions by following the Néel-Chevallier model. The films had thermally activated semiconductor behavior and the electrical resistivity with exponentially increasing of the Ti concentration. Indirect optical band gap observed from an absorption spectroscopy also shows monotonical increase with the increasing of Ti concentration.

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KW - Ferrimagnetic semiconductor

KW - Sputtering method

KW - Thin film

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