Preparation of ZnO Films by an Activated Reactive Evaporation Method

ZnO films were prepared on silica glass substrates by the use of an R. F. activated reactive evaporation (ARE) method, and were examined by X-ray diffraction (XRD) and scanning electron micrograph. XRD indicated that they were c-axis oriented and that an R. F. plasma of Zn and O was necessary for the film deposition. The optimum conditions for a dense film with a fine texture of the surface and having good crystallinity were as follows ; R. F. power : 150~200W, the substrate temperature : 400°C, the oxygen pressure : 2.0 ×10_-4Torr, the evaporation rate : 5.0 Å/s. The standard devitation σ of the X-ray rocking curve of (002) for the film was 1.9°, smaller than that of the film prepared by using an R. F. sputtering method.