TY - GEN
T1 - Printed low-voltage programmable write-once-read-many-memories
AU - Leppäniemi, Jaakko
AU - Fukuda, Nobuko
AU - Alastalo, Ari
AU - Mattila, Tomi
AU - Eiroma, Kim
AU - Kololuoma, Terho
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/11/18
Y1 - 2014/11/18
N2 - Printed low-voltage programmable (< 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm2 cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (∼3 μm) with low variation in the cross-sectional area of the bits.
AB - Printed low-voltage programmable (< 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm2 cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (∼3 μm) with low variation in the cross-sectional area of the bits.
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U2 - 10.1109/ESTC.2014.6962777
DO - 10.1109/ESTC.2014.6962777
M3 - Conference contribution
AN - SCOPUS:84918591459
T3 - ESTC 2014 - 5th Electronics System-Integration Technology Conference
BT - ESTC 2014 - 5th Electronics System-Integration Technology Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 5th Electronics System-Integration Technology Conference, ESTC 2014
Y2 - 16 September 2014 through 18 September 2014
ER -