Quantitative analysis of O2 gas sensing characteristics of picene thin film field-effect transistors

Xuesong Lee, Yasuyuki Sugawara, Akio Ito, Shuhei Oikawa, Naoko Kawasaki, Yumiko Kaji, Ryoji Mitsuhashi, Hideki Okamoto, Akihiko Fujiwara, Kenji Omote, Takashi Kambe, Naoshi Ikeda, Yoshihiro Kubozono

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


O2 gas sensing behaviors are studied in picene thin film field-effect transistors (FETs) with hydrophobic polymer (Cytop™ or polystyrene) coated SiO2 gate dielectrics. Picene thin film FETs show a rapid reduction of hysteresis in transfer curves recorded in forward and reverse measurement modes, compared to a picene FET with hexamethydisilazane- coated SiO2. The picene FETs show very sensitive O2 gas sensing effects down to ∼10 ppm. A quantitative analysis is presented of the gate voltage (VG) dependent mobility induced by O2 exposure, i.e., the suppression of drain current at high VG.

Original languageEnglish
Pages (from-to)1394-1398
Number of pages5
JournalOrganic Electronics
Issue number8
Publication statusPublished - Aug 2010


  • Hysteresis
  • Mobility reduction factor
  • Organic thin film transistor
  • Picene

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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