Radiation monitoring in Mrad range using radiation-sensing field-effect transistors

S. Stanič; Y. Asano; H. Ishino; A. Igarashi; S. Iwaida; Y. Nakano; H. Terazaki; T. Tsuboyama; I. Yoda; D. Žontar

doi:10.1016/j.nima.2005.01.347

Radiation monitoring in Mrad range using radiation-sensing field-effect transistors

S. Stanič, Y. Asano, H. Ishino, A. Igarashi, S. Iwaida, Y. Nakano, H. Terazaki, T. Tsuboyama, I. Yoda, D. Žontar

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

In many of the recent e+e- particle physics experiments, monitoring of the accumulated dose in silicon is essential to maximize the lifetime of silicon vertex detectors operating in severe radiation environments. Using radiation-sensing field-effect transistors (RadFET) as radiation monitoring devices, we studied their responses during irradiation and during subsequent annealing. The relation between the RadFET response and the dose was determined by irradiations with a ⁶⁰Co source with known activity. The study of annealing at three different temperatures showed that RadFETs gradually anneal for up to 40%. Annealing can be fitted by a sum of two exponential functions with time constants of 3 and 85 days.

Original language	English
Pages (from-to)	252-260
Number of pages	9
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	545
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nima.2005.01.347
Publication status	Published - Jun 11 2005
Externally published	Yes

Keywords

Annealing
B factory
Radiation monitoring
Silicon detectors

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2005.01.347

Cite this

Stanič, S., Asano, Y., Ishino, H., Igarashi, A., Iwaida, S., Nakano, Y., Terazaki, H., Tsuboyama, T., Yoda, I., & Žontar, D. (2005). Radiation monitoring in Mrad range using radiation-sensing field-effect transistors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 545(1-2), 252-260. https://doi.org/10.1016/j.nima.2005.01.347

Radiation monitoring in Mrad range using radiation-sensing field-effect transistors. / Stanič, S.; Asano, Y.; Ishino, H. et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 545, No. 1-2, 11.06.2005, p. 252-260.

Research output: Contribution to journal › Article › peer-review

Stanič, S, Asano, Y, Ishino, H, Igarashi, A, Iwaida, S, Nakano, Y, Terazaki, H, Tsuboyama, T, Yoda, I & Žontar, D 2005, 'Radiation monitoring in Mrad range using radiation-sensing field-effect transistors', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 545, no. 1-2, pp. 252-260. https://doi.org/10.1016/j.nima.2005.01.347

@article{7a991f952eec4133b443d8b21e5482f3,

title = "Radiation monitoring in Mrad range using radiation-sensing field-effect transistors",

abstract = "In many of the recent e+e- particle physics experiments, monitoring of the accumulated dose in silicon is essential to maximize the lifetime of silicon vertex detectors operating in severe radiation environments. Using radiation-sensing field-effect transistors (RadFET) as radiation monitoring devices, we studied their responses during irradiation and during subsequent annealing. The relation between the RadFET response and the dose was determined by irradiations with a 60Co source with known activity. The study of annealing at three different temperatures showed that RadFETs gradually anneal for up to 40%. Annealing can be fitted by a sum of two exponential functions with time constants of 3 and 85 days.",

keywords = "Annealing, B factory, Radiation monitoring, Silicon detectors",

author = "S. Stani{\v c} and Y. Asano and H. Ishino and A. Igarashi and S. Iwaida and Y. Nakano and H. Terazaki and T. Tsuboyama and I. Yoda and D. {\v Z}ontar",

year = "2005",

month = jun,

day = "11",

doi = "10.1016/j.nima.2005.01.347",

language = "English",

volume = "545",

pages = "252--260",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Radiation monitoring in Mrad range using radiation-sensing field-effect transistors

AU - Stanič, S.

AU - Asano, Y.

AU - Ishino, H.

AU - Igarashi, A.

AU - Iwaida, S.

AU - Nakano, Y.

AU - Terazaki, H.

AU - Tsuboyama, T.

AU - Yoda, I.

AU - Žontar, D.

PY - 2005/6/11

Y1 - 2005/6/11

N2 - In many of the recent e+e- particle physics experiments, monitoring of the accumulated dose in silicon is essential to maximize the lifetime of silicon vertex detectors operating in severe radiation environments. Using radiation-sensing field-effect transistors (RadFET) as radiation monitoring devices, we studied their responses during irradiation and during subsequent annealing. The relation between the RadFET response and the dose was determined by irradiations with a 60Co source with known activity. The study of annealing at three different temperatures showed that RadFETs gradually anneal for up to 40%. Annealing can be fitted by a sum of two exponential functions with time constants of 3 and 85 days.

AB - In many of the recent e+e- particle physics experiments, monitoring of the accumulated dose in silicon is essential to maximize the lifetime of silicon vertex detectors operating in severe radiation environments. Using radiation-sensing field-effect transistors (RadFET) as radiation monitoring devices, we studied their responses during irradiation and during subsequent annealing. The relation between the RadFET response and the dose was determined by irradiations with a 60Co source with known activity. The study of annealing at three different temperatures showed that RadFETs gradually anneal for up to 40%. Annealing can be fitted by a sum of two exponential functions with time constants of 3 and 85 days.

KW - Annealing

KW - B factory

KW - Radiation monitoring

KW - Silicon detectors

UR - http://www.scopus.com/inward/record.url?scp=21044434020&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21044434020&partnerID=8YFLogxK

U2 - 10.1016/j.nima.2005.01.347

DO - 10.1016/j.nima.2005.01.347

M3 - Article

AN - SCOPUS:21044434020

SN - 0168-9002

VL - 545

SP - 252

EP - 260

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1-2

ER -

Radiation monitoring in Mrad range using radiation-sensing field-effect transistors

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Keywords

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