Raman scattering of disordered SiC

S. Nakashima; K. Kisoda; H. Niizuma; H. Harima

doi:10.1016/0921-4526(95)00748-2

Raman scattering of disordered SiC

S. Nakashima, K. Kisoda, H. Niizuma, H. Harima

Graduate School of Natural Science and Technology

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We have measured Raman scattering from SiC crystals containing stacking disorders. Raman intensity profiles are calculated for models of disordered structures and compared with the observed spectra.

Original language	English
Pages (from-to)	371-373
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	219-220
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-4526(95)00748-2
Publication status	Published - Apr 1 1996

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/0921-4526(95)00748-2

Cite this

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title = "Raman scattering of disordered SiC",

abstract = "We have measured Raman scattering from SiC crystals containing stacking disorders. Raman intensity profiles are calculated for models of disordered structures and compared with the observed spectra.",

author = "S. Nakashima and K. Kisoda and H. Niizuma and H. Harima",

year = "1996",

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doi = "10.1016/0921-4526(95)00748-2",

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T1 - Raman scattering of disordered SiC

AU - Nakashima, S.

AU - Kisoda, K.

AU - Niizuma, H.

AU - Harima, H.

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Y1 - 1996/4/1

N2 - We have measured Raman scattering from SiC crystals containing stacking disorders. Raman intensity profiles are calculated for models of disordered structures and compared with the observed spectra.

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EP - 373

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

Raman scattering of disordered SiC

Abstract

ASJC Scopus subject areas

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