R&D of a pixel sensor based on 0.15 μ m fully depleted SOI technology

Toru Tsuboyama; Yasuo Arai; Koichi Fukuda; Kazuhiko Hara; Hirokazu Hayashi; Masashi Hazumi; Jiro Ida; Hirokazu Ikeda; Yoichi Ikegami; Hirokazu Ishino; Takeo Kawasaki; Takashi Kohriki; Hirotaka Komatsubara; Elena Martin; Hideki Miyake; Ai Mochizuki; Morifumi Ohno; Yuuji Saegusa; Hiro Tajima; Osamu Tajima; Tomiaki Takahashi; Susumu Terada; Yoshinobu Unno; Yutaka Ushiroda; Gary Varner

doi:10.1016/j.nima.2007.07.111

R&D of a pixel sensor based on 0.15 μ m fully depleted SOI technology

Toru Tsuboyama, Yasuo Arai, Koichi Fukuda, Kazuhiko Hara, Hirokazu Hayashi, Masashi Hazumi, Jiro Ida, Hirokazu Ikeda, Yoichi Ikegami, Hirokazu Ishino, Takeo Kawasaki, Takashi Kohriki, Hirotaka Komatsubara, Elena Martin, Hideki Miyake, Ai Mochizuki, Morifumi Ohno, Yuuji Saegusa, Hiro Tajima, Osamu TajimaTomiaki Takahashi, Susumu Terada, Yoshinobu Unno, Yutaka Ushiroda, Gary Varner

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Development of a monolithic pixel detector based on SOI (silicon on insulator) technology was started at KEK in 2005. The substrate of the SOI wafer is used as a radiation sensor. At end of 2005, we submitted several test-structure group (TEG) chips for the 150 nm, fully depleted CMOS process. The TEG designs and preliminary results are presented.

Original language	English
Pages (from-to)	861-865
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	582
Issue number	3
DOIs	https://doi.org/10.1016/j.nima.2007.07.111
Publication status	Published - Dec 1 2007
Externally published	Yes

Keywords

Monolithic pixel sensor
SOI CMOS technology

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2007.07.111

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Tsuboyama, T., Arai, Y., Fukuda, K., Hara, K., Hayashi, H., Hazumi, M., Ida, J., Ikeda, H., Ikegami, Y., Ishino, H., Kawasaki, T., Kohriki, T., Komatsubara, H., Martin, E., Miyake, H., Mochizuki, A., Ohno, M., Saegusa, Y., Tajima, H., ... Varner, G. (2007). R&D of a pixel sensor based on 0.15 μ m fully depleted SOI technology. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 582(3), 861-865. https://doi.org/10.1016/j.nima.2007.07.111

Tsuboyama, T, Arai, Y, Fukuda, K, Hara, K, Hayashi, H, Hazumi, M, Ida, J, Ikeda, H, Ikegami, Y, Ishino, H, Kawasaki, T, Kohriki, T, Komatsubara, H, Martin, E, Miyake, H, Mochizuki, A, Ohno, M, Saegusa, Y, Tajima, H, Tajima, O, Takahashi, T, Terada, S, Unno, Y, Ushiroda, Y & Varner, G 2007, 'R&D of a pixel sensor based on 0.15 μ m fully depleted SOI technology', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 582, no. 3, pp. 861-865. https://doi.org/10.1016/j.nima.2007.07.111

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abstract = "Development of a monolithic pixel detector based on SOI (silicon on insulator) technology was started at KEK in 2005. The substrate of the SOI wafer is used as a radiation sensor. At end of 2005, we submitted several test-structure group (TEG) chips for the 150 nm, fully depleted CMOS process. The TEG designs and preliminary results are presented.",

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author = "Toru Tsuboyama and Yasuo Arai and Koichi Fukuda and Kazuhiko Hara and Hirokazu Hayashi and Masashi Hazumi and Jiro Ida and Hirokazu Ikeda and Yoichi Ikegami and Hirokazu Ishino and Takeo Kawasaki and Takashi Kohriki and Hirotaka Komatsubara and Elena Martin and Hideki Miyake and Ai Mochizuki and Morifumi Ohno and Yuuji Saegusa and Hiro Tajima and Osamu Tajima and Tomiaki Takahashi and Susumu Terada and Yoshinobu Unno and Yutaka Ushiroda and Gary Varner",

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doi = "10.1016/j.nima.2007.07.111",

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T1 - R&D of a pixel sensor based on 0.15 μ m fully depleted SOI technology

AU - Tsuboyama, Toru

AU - Arai, Yasuo

AU - Fukuda, Koichi

AU - Hara, Kazuhiko

AU - Hayashi, Hirokazu

AU - Hazumi, Masashi

AU - Ida, Jiro

AU - Ikeda, Hirokazu

AU - Ikegami, Yoichi

AU - Ishino, Hirokazu

AU - Kawasaki, Takeo

AU - Kohriki, Takashi

AU - Komatsubara, Hirotaka

AU - Martin, Elena

AU - Miyake, Hideki

AU - Mochizuki, Ai

AU - Ohno, Morifumi

AU - Saegusa, Yuuji

AU - Tajima, Hiro

AU - Tajima, Osamu

AU - Takahashi, Tomiaki

AU - Terada, Susumu

AU - Unno, Yoshinobu

AU - Ushiroda, Yutaka

AU - Varner, Gary

PY - 2007/12/1

Y1 - 2007/12/1

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AB - Development of a monolithic pixel detector based on SOI (silicon on insulator) technology was started at KEK in 2005. The substrate of the SOI wafer is used as a radiation sensor. At end of 2005, we submitted several test-structure group (TEG) chips for the 150 nm, fully depleted CMOS process. The TEG designs and preliminary results are presented.

KW - Monolithic pixel sensor

KW - SOI CMOS technology

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IS - 3

ER -

R&D of a pixel sensor based on 0.15 μ m fully depleted SOI technology

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