Rapid epitaxial growth of Si and SiGe mono-crystalline films on silicon-on-glass substrates by reactive CVD using SiH4, GeH 4, and F2

Hiroshi Noge; Akira Okada; Ta Ko Chuang; J. Greg Couillard; Michio Kondo

doi:10.1557/opl.2012.867

Rapid epitaxial growth of Si and SiGe mono-crystalline films on silicon-on-glass substrates by reactive CVD using SiH₄, GeH ₄, and F₂

Hiroshi Noge, Akira Okada, Ta Ko Chuang, J. Greg Couillard, Michio Kondo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670°C by reactive CVD utilizing the spontaneous exothermic reaction between SiH₄, GeH₄, and F₂. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time. This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20-50°C increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si_0.5Ge _0.5 film is as low as 5 × 10⁶ cm^-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm ²/Vs, confirming the good crystallinity of the epitaxial films.

Original language	English
Title of host publication	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2012
Pages	331-337
Number of pages	7
DOIs	https://doi.org/10.1557/opl.2012.867
Publication status	Published - 2012
Externally published	Yes
Event	2012 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 9 2012 → Apr 13 2012

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1426
ISSN (Print)	0272-9172

Other

Other	2012 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	4/9/12 → 4/13/12

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/opl.2012.867

Cite this

Noge, H., Okada, A., Chuang, T. K., Couillard, J. G., & Kondo, M. (2012). Rapid epitaxial growth of Si and SiGe mono-crystalline films on silicon-on-glass substrates by reactive CVD using SiH₄, GeH ₄, and F₂. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2012 (pp. 331-337). (Materials Research Society Symposium Proceedings; Vol. 1426). https://doi.org/10.1557/opl.2012.867

Rapid epitaxial growth of Si and SiGe mono-crystalline films on silicon-on-glass substrates by reactive CVD using SiH₄, GeH ₄, and F₂. / Noge, Hiroshi; Okada, Akira; Chuang, Ta Ko et al.
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2012. 2012. p. 331-337 (Materials Research Society Symposium Proceedings; Vol. 1426).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Noge, H, Okada, A, Chuang, TK, Couillard, JG & Kondo, M 2012, Rapid epitaxial growth of Si and SiGe mono-crystalline films on silicon-on-glass substrates by reactive CVD using SiH₄, GeH ₄, and F₂. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2012. Materials Research Society Symposium Proceedings, vol. 1426, pp. 331-337, 2012 MRS Spring Meeting, San Francisco, CA, United States, 4/9/12. https://doi.org/10.1557/opl.2012.867

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abstract = "We have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670°C by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time. This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20-50°C increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si0.5Ge 0.5 film is as low as 5 × 106 cm-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm 2/Vs, confirming the good crystallinity of the epitaxial films.",

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