TY - JOUR
T1 - Resist coating on vertical side faces using conventional spin coating for creating three-dimensional nanostructures in semiconductors
AU - Yamazaki, Kenji
AU - Yamaguchi, Hiroshi
PY - 2010/10/1
Y1 - 2010/10/1
N2 - We have devised a new resist-coating method using spin coating for creating three-dimensional (3D) nanostructures in semiconductors. Using this method, we were able to successfully coat poly(methyl methacrylate) (PMMA) films on the vertical side faces of micrometer-order Si blocks. The use of a solvent with low viscosity was found to be effective for obtaining good uniformity in resist thickness. Moreover, Monte Carlo simulations of electron scattering revealed that fine patterning on both the opposite side faces of a Si block should be possible by simultaneous development followed by electron beam (EB) writing from opposite directions, despite electron scattering.
AB - We have devised a new resist-coating method using spin coating for creating three-dimensional (3D) nanostructures in semiconductors. Using this method, we were able to successfully coat poly(methyl methacrylate) (PMMA) films on the vertical side faces of micrometer-order Si blocks. The use of a solvent with low viscosity was found to be effective for obtaining good uniformity in resist thickness. Moreover, Monte Carlo simulations of electron scattering revealed that fine patterning on both the opposite side faces of a Si block should be possible by simultaneous development followed by electron beam (EB) writing from opposite directions, despite electron scattering.
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U2 - 10.1143/APEX.3.106501
DO - 10.1143/APEX.3.106501
M3 - Article
AN - SCOPUS:78549294503
SN - 1882-0778
VL - 3
JO - Applied Physics Express
JF - Applied Physics Express
IS - 10
M1 - 106501
ER -