Resistive anisotropy of candidate excitonic insulator Ta2NiSe5under pressure

H. Arima, Y. Naito, K. Kudo, N. Katayama, H. Sawa, M. Nohara, Y. F. Lu, K. Kitagawa, H. Takagi, Y. Uwatoko, K. Matsubayashi

    Research output: Contribution to journalConference articlepeer-review

    2 Citations (Scopus)


    We have measured anisotropic electrical resistivity of quasi-one-dimensional Ta2NiSe5 single crystals under pressure. While the in-plane anisotropy is almost pressure independent, the inter-plane one greatly decreases at P c ∼ 3 GPa accompanied by a pressure-induced semiconductor-semimetal transition. Nevertheless, a similar anomaly in the temperature dependence of in-plane anisotropy has been observed in each phase. This anomaly in the low-pressure phase below P c is regarded as an excitonic transition, and thus both of these anomalies are suppressed with increasing pressure. These results suggest that the suppression of the excitonic binding energy with pressure is caused by the increase of free carrier densities and the inter-plane conductivity.

    Original languageEnglish
    Article number012001
    JournalJournal of Physics: Conference Series
    Issue number1
    Publication statusPublished - Aug 17 2020
    Event27th AIRAPT International Conference on High Pressure Science and Technology - Rio de Janeiro, Brazil
    Duration: Aug 4 2019Aug 9 2019

    ASJC Scopus subject areas

    • Physics and Astronomy(all)


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