TY - GEN
T1 - Resonant gate driver for normally-on GaN high-electron-mobility transistor
AU - Ishibashi, Takaharu
AU - Okamoto, Masayuki
AU - Hiraki, Eiji
AU - Tanaka, Toshihiko
AU - Hashizume, Tamotsu
AU - Kachi, Tetsu
PY - 2013/9/16
Y1 - 2013/9/16
N2 - Wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are promised materials for next-generation power devices. The authors have recently fabricated a GaN-based high-electron-mobility transistor (HEMT), which is a normally-on device, for power electronics application. However, the power consumption in the constructed gate drive circuit increases when the GaN HEMT is used under higher-frequency operation. A new gate drive circuit with lower power consumption for the normally-on GaN HEMT is strongly required. In this paper, a new resonant gate drive circuit, which is most suitable for the newly fabricated GaN HEMT, is proposed. The validity and high practicability of the proposed resonant gate drive circuit are demonstrated by simulation and experimental results.
AB - Wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are promised materials for next-generation power devices. The authors have recently fabricated a GaN-based high-electron-mobility transistor (HEMT), which is a normally-on device, for power electronics application. However, the power consumption in the constructed gate drive circuit increases when the GaN HEMT is used under higher-frequency operation. A new gate drive circuit with lower power consumption for the normally-on GaN HEMT is strongly required. In this paper, a new resonant gate drive circuit, which is most suitable for the newly fabricated GaN HEMT, is proposed. The validity and high practicability of the proposed resonant gate drive circuit are demonstrated by simulation and experimental results.
KW - HEMT
KW - gallium nitride
KW - high switching frequency
KW - normally-on
KW - resonant gate drive
UR - http://www.scopus.com/inward/record.url?scp=84883727207&partnerID=8YFLogxK
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U2 - 10.1109/ECCE-Asia.2013.6579122
DO - 10.1109/ECCE-Asia.2013.6579122
M3 - Conference contribution
AN - SCOPUS:84883727207
SN - 9781479904822
T3 - 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013
SP - 365
EP - 371
BT - 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013
T2 - 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013
Y2 - 3 June 2013 through 6 June 2013
ER -