Role of cyclic process in the initial stage of diamond deposition during bias enhanced nucleation

Y. Hayashi; Y. Matsushita; T. Soga; M. Umeno; T. Jimbo

doi:10.1063/1.1480116

Role of cyclic process in the initial stage of diamond deposition during bias enhanced nucleation

Y. Hayashi, Y. Matsushita, T. Soga, M. Umeno, T. Jimbo

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The initial nucleation of diamond film on a Si substrate, deposited by a three-step growth process together with a cycle bias enhanced nucleation (BEN) growth/H ₂ plasma etching technique in a microwave plasma enhanced chemical vapor deposition system has been investigated by atomic force microscopy, Raman spectroscopy and x-ray photoelectron spectroscopy. The surface morphology and the uniformity of 100-oriented textured grains at the BEN step were found to be greatly increased by applying the cyclic process with some optimal H ₂ plasma etching time during the BEN stage.

Original language	English
Pages (from-to)	9752-9756
Number of pages	5
Journal	Journal of Applied Physics
Volume	91
Issue number	12
DOIs	https://doi.org/10.1063/1.1480116
Publication status	Published - Jun 15 2002
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "The initial nucleation of diamond film on a Si substrate, deposited by a three-step growth process together with a cycle bias enhanced nucleation (BEN) growth/H 2 plasma etching technique in a microwave plasma enhanced chemical vapor deposition system has been investigated by atomic force microscopy, Raman spectroscopy and x-ray photoelectron spectroscopy. The surface morphology and the uniformity of 100-oriented textured grains at the BEN step were found to be greatly increased by applying the cyclic process with some optimal H 2 plasma etching time during the BEN stage.",

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AU - Hayashi, Y.

AU - Matsushita, Y.

AU - Soga, T.

AU - Umeno, M.

AU - Jimbo, T.

PY - 2002/6/15

Y1 - 2002/6/15

N2 - The initial nucleation of diamond film on a Si substrate, deposited by a three-step growth process together with a cycle bias enhanced nucleation (BEN) growth/H 2 plasma etching technique in a microwave plasma enhanced chemical vapor deposition system has been investigated by atomic force microscopy, Raman spectroscopy and x-ray photoelectron spectroscopy. The surface morphology and the uniformity of 100-oriented textured grains at the BEN step were found to be greatly increased by applying the cyclic process with some optimal H 2 plasma etching time during the BEN stage.

AB - The initial nucleation of diamond film on a Si substrate, deposited by a three-step growth process together with a cycle bias enhanced nucleation (BEN) growth/H 2 plasma etching technique in a microwave plasma enhanced chemical vapor deposition system has been investigated by atomic force microscopy, Raman spectroscopy and x-ray photoelectron spectroscopy. The surface morphology and the uniformity of 100-oriented textured grains at the BEN step were found to be greatly increased by applying the cyclic process with some optimal H 2 plasma etching time during the BEN stage.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Role of cyclic process in the initial stage of diamond deposition during bias enhanced nucleation

Abstract

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