Role of SrTiO3 seed layer on low-temperature crystallization of Pb(Zr, Ti)O3 films prepared by metalorganic chemical vapor deposition

Ji Won Moon; Naoki Wakiya; Takanori Kiguchi; Tomohiko Yoshioka; Tanaka Junzo; Kazuo Shinozaki

Role of SrTiO₃ seed layer on low-temperature crystallization of Pb(Zr, Ti)O₃ films prepared by metalorganic chemical vapor deposition

Ji Won Moon, Naoki Wakiya, Takanori Kiguchi, Tomohiko Yoshioka, Tanaka Junzo, Kazuo Shinozaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The role of SrTiO₃ seed layer on low-temperature crystallization of Pb(Zr, Ti)O₃ (PZT) film was investigated. The SrTiO₃ seeds were prepared by pulsed laser deposition (PLD) with the temperature range of 400-600°C and PZT films were prepared by thermal MOCVD. The pyrochlore free PZT films can be successfully crystallized at around 340°C on SrTiO₃ seed layers by thermal MOCVD. It was found that the role of SrTiO₃ seed layer is not only pyrochlore suppression but also perovskite promotion. It is also considered that crystallinity, surface coverage and seed layer thickness are important parameters for low-temperature crystallization and electrical properties of PZT films.

Original language	English
Title of host publication	Ferroelectrics, Multiferroics, and Magnetoelectrics
Pages	121-126
Number of pages	6
Publication status	Published - 2008
Externally published	Yes
Event	2007 MRS Fall Meeting - Boston, MA, United States Duration: Nov 26 2007 → Nov 30 2007

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1034
ISSN (Print)	0272-9172

Other

Other	2007 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/26/07 → 11/30/07

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Role of SrTiO₃ seed layer on low-temperature crystallization of Pb(Zr, Ti)O₃ films prepared by metalorganic chemical vapor deposition. / Moon, Ji Won; Wakiya, Naoki; Kiguchi, Takanori et al.
Ferroelectrics, Multiferroics, and Magnetoelectrics. 2008. p. 121-126 (Materials Research Society Symposium Proceedings; Vol. 1034).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Moon, JW, Wakiya, N, Kiguchi, T, Yoshioka, T, Junzo, T & Shinozaki, K 2008, Role of SrTiO₃ seed layer on low-temperature crystallization of Pb(Zr, Ti)O₃ films prepared by metalorganic chemical vapor deposition. in Ferroelectrics, Multiferroics, and Magnetoelectrics. Materials Research Society Symposium Proceedings, vol. 1034, pp. 121-126, 2007 MRS Fall Meeting, Boston, MA, United States, 11/26/07.

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abstract = "The role of SrTiO3 seed layer on low-temperature crystallization of Pb(Zr, Ti)O3 (PZT) film was investigated. The SrTiO3 seeds were prepared by pulsed laser deposition (PLD) with the temperature range of 400-600°C and PZT films were prepared by thermal MOCVD. The pyrochlore free PZT films can be successfully crystallized at around 340°C on SrTiO3 seed layers by thermal MOCVD. It was found that the role of SrTiO3 seed layer is not only pyrochlore suppression but also perovskite promotion. It is also considered that crystallinity, surface coverage and seed layer thickness are important parameters for low-temperature crystallization and electrical properties of PZT films.",

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AU - Yoshioka, Tomohiko

AU - Junzo, Tanaka

AU - Shinozaki, Kazuo

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AB - The role of SrTiO3 seed layer on low-temperature crystallization of Pb(Zr, Ti)O3 (PZT) film was investigated. The SrTiO3 seeds were prepared by pulsed laser deposition (PLD) with the temperature range of 400-600°C and PZT films were prepared by thermal MOCVD. The pyrochlore free PZT films can be successfully crystallized at around 340°C on SrTiO3 seed layers by thermal MOCVD. It was found that the role of SrTiO3 seed layer is not only pyrochlore suppression but also perovskite promotion. It is also considered that crystallinity, surface coverage and seed layer thickness are important parameters for low-temperature crystallization and electrical properties of PZT films.

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