Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers

Takashi Egawa; Yasufumi Kobayashi; Yasuhiko Hayashi; Tetsuo Soga; Takashi Jimbo; Masayoshi Umeno

doi:10.1143/JJAP.29.L1133

Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers

Takashi Egawa, Yasufumi Kobayashi, Yasuhiko Hayashi, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Room-temperature CW operation of all-MOCVD-grown Al_0.3Ga_0.7As/GaAs SQW lasers on Si substrates with Al_0.5Ga_0.5As/Al_0.55Ga_0.45P intermediate layers has been demonstrated for the first time. The averaged threshold current density and differential quantum efficiency of the lasers grown with the Al_0.5Ga_0.5As/Al_0.55Ga_0.45P intermediate layers are 2.23 kA/cm² and 50.3%, respectively, which are superior to those of the lasers grown by the two-step growth technique. The characteristics of the lasers using this technique are more uniform than those grown by the two-step growth technique.

Original language	English
Pages (from-to)	L1133-L1135
Journal	Japanese Journal of Applied Physics
Volume	29
Issue number	7
DOIs	https://doi.org/10.1143/JJAP.29.L1133
Publication status	Published - Jul 1990
Externally published	Yes

Keywords

Aigaas/aigap
Cw operation
Gaas/si
Laser
Mocvd
Photoluminescence
Quantum well
Tem

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.29.L1133

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title = "Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers",

abstract = "Room-temperature CW operation of all-MOCVD-grown Al0.3Ga0.7As/GaAs SQW lasers on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers has been demonstrated for the first time. The averaged threshold current density and differential quantum efficiency of the lasers grown with the Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers are 2.23 kA/cm2 and 50.3%, respectively, which are superior to those of the lasers grown by the two-step growth technique. The characteristics of the lasers using this technique are more uniform than those grown by the two-step growth technique.",

keywords = "Aigaas/aigap, Cw operation, Gaas/si, Laser, Mocvd, Photoluminescence, Quantum well, Tem",

author = "Takashi Egawa and Yasufumi Kobayashi and Yasuhiko Hayashi and Tetsuo Soga and Takashi Jimbo and Masayoshi Umeno",

year = "1990",

month = jul,

doi = "10.1143/JJAP.29.L1133",

language = "English",

volume = "29",

pages = "L1133--L1135",

journal = "Japanese Journal of Applied Physics",

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number = "7",

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T1 - Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers

AU - Egawa, Takashi

AU - Kobayashi, Yasufumi

AU - Hayashi, Yasuhiko

AU - Soga, Tetsuo

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

PY - 1990/7

Y1 - 1990/7

N2 - Room-temperature CW operation of all-MOCVD-grown Al0.3Ga0.7As/GaAs SQW lasers on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers has been demonstrated for the first time. The averaged threshold current density and differential quantum efficiency of the lasers grown with the Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers are 2.23 kA/cm2 and 50.3%, respectively, which are superior to those of the lasers grown by the two-step growth technique. The characteristics of the lasers using this technique are more uniform than those grown by the two-step growth technique.

AB - Room-temperature CW operation of all-MOCVD-grown Al0.3Ga0.7As/GaAs SQW lasers on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers has been demonstrated for the first time. The averaged threshold current density and differential quantum efficiency of the lasers grown with the Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers are 2.23 kA/cm2 and 50.3%, respectively, which are superior to those of the lasers grown by the two-step growth technique. The characteristics of the lasers using this technique are more uniform than those grown by the two-step growth technique.

KW - Aigaas/aigap

KW - Cw operation

KW - Gaas/si

KW - Laser

KW - Mocvd

KW - Photoluminescence

KW - Quantum well

KW - Tem

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U2 - 10.1143/JJAP.29.L1133

DO - 10.1143/JJAP.29.L1133

M3 - Article

AN - SCOPUS:0025463999

SN - 0021-4922

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SP - L1133-L1135

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 7

ER -

Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers

Abstract

Keywords

ASJC Scopus subject areas

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