TY - JOUR
T1 - Self-Aligned Growth of Organic Semiconductor Single Crystals by Electric Field
AU - Kotsuki, Kenji
AU - Obata, Seiji
AU - Saiki, Koichiro
N1 - Funding Information:
We would like to thank Nippon Kayaku Co. for providing us C8-BTBT. This work was partly supported by a Grant-in-Aid for Scientific Research from MEXT of Japan (No. 25107002).
Publisher Copyright:
© 2015 American Chemical Society.
PY - 2016/1/19
Y1 - 2016/1/19
N2 - We proposed a novel but facile method for growing organic semiconductor single-crystals via solvent vapor annealing (SVA) under electric field. In the conventional SVA growth process, nuclei of crystals appeared anywhere on the substrate and their crystallographic axes were randomly distributed. We applied electric field during the SVA growth of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) on the SiO2/Si substrate on which a pair of electrodes had been deposited beforehand. Real-time observation of the SVA process revealed that rodlike single crystals grew with their long axes parallel to the electric field and bridged the prepatterned electrodes. As a result, C8-BTBT crystals automatically formed a field effect transistor (FET) structure and the mobility reached 1.9 cm2/(V s). Electric-field-assisted SVA proved a promising method for constructing high-mobility single-crystal FETs at the desired position by a low-cost solution process.
AB - We proposed a novel but facile method for growing organic semiconductor single-crystals via solvent vapor annealing (SVA) under electric field. In the conventional SVA growth process, nuclei of crystals appeared anywhere on the substrate and their crystallographic axes were randomly distributed. We applied electric field during the SVA growth of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) on the SiO2/Si substrate on which a pair of electrodes had been deposited beforehand. Real-time observation of the SVA process revealed that rodlike single crystals grew with their long axes parallel to the electric field and bridged the prepatterned electrodes. As a result, C8-BTBT crystals automatically formed a field effect transistor (FET) structure and the mobility reached 1.9 cm2/(V s). Electric-field-assisted SVA proved a promising method for constructing high-mobility single-crystal FETs at the desired position by a low-cost solution process.
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U2 - 10.1021/acs.langmuir.5b03975
DO - 10.1021/acs.langmuir.5b03975
M3 - Article
AN - SCOPUS:84955292439
SN - 0743-7463
VL - 32
SP - 644
EP - 649
JO - Langmuir
JF - Langmuir
IS - 2
ER -