Abstract
A complementary single-electron inverter occupying an extremely small area is fabricated on an SOI substrate. For the fabrication, the vertical pattern-dependent oxidation method, which enables the formation of two tiny single-electron transistors (SETs) aligned in parallel, is advanced so that the two SETs are connected in series to realize an inverter configuration. By controlling peak positions of the conductance curve of the SETs in the inverter using the side gates situated near each SET, input-output transfer with a gain larger than unity is demonstrated at 27 K.
| Original language | English |
|---|---|
| Pages (from-to) | 367-370 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - Dec 1 1999 |
| Event | 1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: Dec 5 1999 → Dec 8 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry