Silicon single-electron turnstile

Y. Ono; K. Yamazaki; Y. Takahashi

doi:10.1109/DRC.2003.1226906

Silicon single-electron turnstile

Y. Ono, K. Yamazaki, Y. Takahashi

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we report the first demonstration of the single-electron turnstile, one of the single-charge transfer device, based on Si materials.

Original language	English
Title of host publication	61st Device Research Conference, DRC 2003 - Conference Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	137-138
Number of pages	2
ISBN (Electronic)	0780377273
DOIs	https://doi.org/10.1109/DRC.2003.1226906
Publication status	Published - Jan 1 2003
Event	61st Device Research Conference, DRC 2003 - Salt Lake City, United States Duration: Jun 23 2003 → Jun 25 2003

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2003-January
ISSN (Print)	1548-3770

Other

Other	61st Device Research Conference, DRC 2003
Country/Territory	United States
City	Salt Lake City
Period	6/23/03 → 6/25/03

Keywords

Application specific integrated circuits
Current measurement
Laboratories
MOSFET circuits
Oxidation
Silicon
Single electron devices
Single electron transistors
Temperature
Threshold voltage

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2003.1226906

Cite this

Silicon single-electron turnstile. / Ono, Y.; Yamazaki, K.; Takahashi, Y.
61st Device Research Conference, DRC 2003 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2003. p. 137-138 1226906 (Device Research Conference - Conference Digest, DRC; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ono, Y, Yamazaki, K & Takahashi, Y 2003, Silicon single-electron turnstile. in 61st Device Research Conference, DRC 2003 - Conference Digest., 1226906, Device Research Conference - Conference Digest, DRC, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 137-138, 61st Device Research Conference, DRC 2003, Salt Lake City, United States, 6/23/03. https://doi.org/10.1109/DRC.2003.1226906

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abstract = "In this paper, we report the first demonstration of the single-electron turnstile, one of the single-charge transfer device, based on Si materials.",

keywords = "Application specific integrated circuits, Current measurement, Laboratories, MOSFET circuits, Oxidation, Silicon, Single electron devices, Single electron transistors, Temperature, Threshold voltage",

author = "Y. Ono and K. Yamazaki and Y. Takahashi",

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doi = "10.1109/DRC.2003.1226906",

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KW - Single electron transistors

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Silicon single-electron turnstile

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

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