Single crystal growth and fermi surface properties of an antiferromagnet UPdGa5

Shugo Ikeda; Tatsuma D. Matsuda; Yoshinori Haga; Etsuji Yamamoto; Miho Nakashima; Shingo Kirita; Tatsuo C. Kobayashi; Masato Hedo; Yoshiya Uwatoko; Hiroshi Yamagami; Hiroaki Shishido; Taiki Ueda; Rikio Settai; Yoshichika Onuki

doi:10.1143/JPSJ.74.2277

Single crystal growth and fermi surface properties of an antiferromagnet UPdGa₅

Shugo Ikeda, Tatsuma D. Matsuda, Yoshinori Haga, Etsuji Yamamoto, Miho Nakashima, Shingo Kirita, Tatsuo C. Kobayashi, Masato Hedo, Yoshiya Uwatoko, Hiroshi Yamagami, Hiroaki Shishido, Taiki Ueda, Rikio Settai, Yoshichika Onuki

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We have succeeded in growing a high-quality single crystal of an antiferromagnet UPdGa₅ by the Ga-flux method with the off-stoichiometric composition of U : Pd : Ga = 1 : 2 : 7.3. The Néel temperature T_N = 30.5 K is found to increase with increasing the residual resistivity ratio (RRR) and becomes constant for a high-quality single crystal sample whose RRR is larger than 50. The electronic state has been investigated by the de Haas-van Alphen experiment, indicating the similar cylindrical Fermi surfaces as in an antiferromagnet UPtGa₅. We have also studied the pressure effect by measuring the electrical resistivity. The Néel temperature decreases with increasing pressure and becomes zero at 3.1 GPa. The antiferromagnetic state is changed into the paramagnetic state above 3.1 GPa.

Original language	English
Pages (from-to)	2277-2281
Number of pages	5
Journal	journal of the physical society of japan
Volume	74
Issue number	8
DOIs	https://doi.org/10.1143/JPSJ.74.2277
Publication status	Published - Aug 1 2005

Keywords

Antiferromagnet
UPdGa
dHvA

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1143/JPSJ.74.2277

Cite this

@article{6f37d6f1752f4ed8a11b6107cf22d03f,

title = "Single crystal growth and fermi surface properties of an antiferromagnet UPdGa5",

abstract = "We have succeeded in growing a high-quality single crystal of an antiferromagnet UPdGa5 by the Ga-flux method with the off-stoichiometric composition of U : Pd : Ga = 1 : 2 : 7.3. The N{\'e}el temperature TN = 30.5 K is found to increase with increasing the residual resistivity ratio (RRR) and becomes constant for a high-quality single crystal sample whose RRR is larger than 50. The electronic state has been investigated by the de Haas-van Alphen experiment, indicating the similar cylindrical Fermi surfaces as in an antiferromagnet UPtGa5. We have also studied the pressure effect by measuring the electrical resistivity. The N{\'e}el temperature decreases with increasing pressure and becomes zero at 3.1 GPa. The antiferromagnetic state is changed into the paramagnetic state above 3.1 GPa.",

keywords = "Antiferromagnet, UPdGa, dHvA",

author = "Shugo Ikeda and Matsuda, {Tatsuma D.} and Yoshinori Haga and Etsuji Yamamoto and Miho Nakashima and Shingo Kirita and Kobayashi, {Tatsuo C.} and Masato Hedo and Yoshiya Uwatoko and Hiroshi Yamagami and Hiroaki Shishido and Taiki Ueda and Rikio Settai and Yoshichika Onuki",

year = "2005",

month = aug,

day = "1",

doi = "10.1143/JPSJ.74.2277",

language = "English",

volume = "74",

pages = "2277--2281",

journal = "journal of the physical society of japan",

issn = "0031-9015",

publisher = "Physical Society of Japan",

number = "8",

}

TY - JOUR

T1 - Single crystal growth and fermi surface properties of an antiferromagnet UPdGa5

AU - Ikeda, Shugo

AU - Matsuda, Tatsuma D.

AU - Haga, Yoshinori

AU - Yamamoto, Etsuji

AU - Nakashima, Miho

AU - Kirita, Shingo

AU - Kobayashi, Tatsuo C.

AU - Hedo, Masato

AU - Uwatoko, Yoshiya

AU - Yamagami, Hiroshi

AU - Shishido, Hiroaki

AU - Ueda, Taiki

AU - Settai, Rikio

AU - Onuki, Yoshichika

PY - 2005/8/1

Y1 - 2005/8/1

N2 - We have succeeded in growing a high-quality single crystal of an antiferromagnet UPdGa5 by the Ga-flux method with the off-stoichiometric composition of U : Pd : Ga = 1 : 2 : 7.3. The Néel temperature TN = 30.5 K is found to increase with increasing the residual resistivity ratio (RRR) and becomes constant for a high-quality single crystal sample whose RRR is larger than 50. The electronic state has been investigated by the de Haas-van Alphen experiment, indicating the similar cylindrical Fermi surfaces as in an antiferromagnet UPtGa5. We have also studied the pressure effect by measuring the electrical resistivity. The Néel temperature decreases with increasing pressure and becomes zero at 3.1 GPa. The antiferromagnetic state is changed into the paramagnetic state above 3.1 GPa.

AB - We have succeeded in growing a high-quality single crystal of an antiferromagnet UPdGa5 by the Ga-flux method with the off-stoichiometric composition of U : Pd : Ga = 1 : 2 : 7.3. The Néel temperature TN = 30.5 K is found to increase with increasing the residual resistivity ratio (RRR) and becomes constant for a high-quality single crystal sample whose RRR is larger than 50. The electronic state has been investigated by the de Haas-van Alphen experiment, indicating the similar cylindrical Fermi surfaces as in an antiferromagnet UPtGa5. We have also studied the pressure effect by measuring the electrical resistivity. The Néel temperature decreases with increasing pressure and becomes zero at 3.1 GPa. The antiferromagnetic state is changed into the paramagnetic state above 3.1 GPa.

KW - Antiferromagnet

KW - UPdGa

KW - dHvA

UR - http://www.scopus.com/inward/record.url?scp=24644451656&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24644451656&partnerID=8YFLogxK

U2 - 10.1143/JPSJ.74.2277

DO - 10.1143/JPSJ.74.2277

M3 - Article

AN - SCOPUS:24644451656

SN - 0031-9015

VL - 74

SP - 2277

EP - 2281

JO - journal of the physical society of japan

JF - journal of the physical society of japan

IS - 8

ER -