Single Crystal Growth and Magnetic Properties of CeRh2Si2

Rikio Settai; Akira Misawa; Shingo Araki; Masato Kosaki; Kiyohiro Sugiyama; Yoshichika Ōnuki; Tetsuya Takeuchi; Koichi Kindo; Kiyohiro Sugiyama; Yoshinori Haga; Etsuji Yamamoto; Yoshichika Ōnuki

doi:10.1143/JPSJ.66.2260

Single Crystal Growth and Magnetic Properties of CeRh₂Si₂

Rikio Settai, Akira Misawa, Shingo Araki, Masato Kosaki, Kiyohiro Sugiyama, Yoshichika Ōnuki, Tetsuya Takeuchi, Koichi Kindo, Kiyohiro Sugiyama, Yoshinori Haga, Etsuji Yamamoto, Yoshichika Ōnuki

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

We have grown single crystals of CeRh₂Si₂ and LaRh₂Si₂ by the Czochralski pulling method in a tetra-arc furnace. The electrical resistivity and magnetic susceptibility are highly anisotropic, reflecting the tetragonal crystal structure. A metamagnetic transition is found for the magnetic field along the [001] direction at 26 T.

Original language	English
Pages (from-to)	2260-2263
Number of pages	4
Journal	journal of the physical society of japan
Volume	66
Issue number	8
DOIs	https://doi.org/10.1143/JPSJ.66.2260
Publication status	Published - 1997
Externally published	Yes

Keywords

CeRhSi
electrical resistivity
magnetization
metamagnetic transition
single crystal
susceptibility

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1143/JPSJ.66.2260

Cite this

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title = "Single Crystal Growth and Magnetic Properties of CeRh2Si2",

abstract = "We have grown single crystals of CeRh2Si2 and LaRh2Si2 by the Czochralski pulling method in a tetra-arc furnace. The electrical resistivity and magnetic susceptibility are highly anisotropic, reflecting the tetragonal crystal structure. A metamagnetic transition is found for the magnetic field along the [001] direction at 26 T.",

keywords = "CeRhSi, electrical resistivity, magnetization, metamagnetic transition, single crystal, susceptibility",

author = "Rikio Settai and Akira Misawa and Shingo Araki and Masato Kosaki and Kiyohiro Sugiyama and Yoshichika Ōnuki and Tetsuya Takeuchi and Koichi Kindo and Kiyohiro Sugiyama and Yoshinori Haga and Etsuji Yamamoto and Yoshichika Ōnuki",

year = "1997",

doi = "10.1143/JPSJ.66.2260",

language = "English",

volume = "66",

pages = "2260--2263",

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publisher = "Physical Society of Japan",

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TY - JOUR

T1 - Single Crystal Growth and Magnetic Properties of CeRh2Si2

AU - Settai, Rikio

AU - Misawa, Akira

AU - Araki, Shingo

AU - Kosaki, Masato

AU - Sugiyama, Kiyohiro

AU - Ōnuki, Yoshichika

AU - Takeuchi, Tetsuya

AU - Kindo, Koichi

AU - Sugiyama, Kiyohiro

AU - Haga, Yoshinori

AU - Yamamoto, Etsuji

AU - Ōnuki, Yoshichika

PY - 1997

Y1 - 1997

N2 - We have grown single crystals of CeRh2Si2 and LaRh2Si2 by the Czochralski pulling method in a tetra-arc furnace. The electrical resistivity and magnetic susceptibility are highly anisotropic, reflecting the tetragonal crystal structure. A metamagnetic transition is found for the magnetic field along the [001] direction at 26 T.

AB - We have grown single crystals of CeRh2Si2 and LaRh2Si2 by the Czochralski pulling method in a tetra-arc furnace. The electrical resistivity and magnetic susceptibility are highly anisotropic, reflecting the tetragonal crystal structure. A metamagnetic transition is found for the magnetic field along the [001] direction at 26 T.

KW - CeRhSi

KW - electrical resistivity

KW - magnetization

KW - metamagnetic transition

KW - single crystal

KW - susceptibility

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DO - 10.1143/JPSJ.66.2260

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SP - 2260

EP - 2263

JO - journal of the physical society of japan

JF - journal of the physical society of japan

IS - 8

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