Single-electron and quantum SOI devices

Yukinori Ono, Kenji Yamazaki, Masao Nagase, Seiji Horiguchi, Kenji Shiraishi, Yasuo Takahashi

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)


This paper describes, from the viewpoint of device fabrication, single-electron and quantum devices using silicon-on-insulators (SOIs). We point out that control of the oxidation of Si is quite important and could be the key to their fabrication. We also introduce our technique for making single-electron transistors (SETs), which uses special phenomena that occur during the oxidation of SOIs, and show that the technique enables us to realize primary single-electron circuits as a result of its high controllability and high reproducibility.

Original languageEnglish
Pages (from-to)435-442
Number of pages8
JournalMicroelectronic Engineering
Issue number1-4
Publication statusPublished - Nov 1 2001
Event12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italy
Duration: Jun 20 2001Jun 23 2001


  • Oxidation
  • Quantum device
  • Silicon-on-insulator
  • Single-electron transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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