Single-electron and quantum SOI devices

Yukinori Ono; Kenji Yamazaki; Masao Nagase; Seiji Horiguchi; Kenji Shiraishi; Yasuo Takahashi

doi:10.1016/S0167-9317(01)00638-4

Single-electron and quantum SOI devices

Yukinori Ono, Kenji Yamazaki, Masao Nagase, Seiji Horiguchi, Kenji Shiraishi, Yasuo Takahashi

Faculty of Engineering

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

This paper describes, from the viewpoint of device fabrication, single-electron and quantum devices using silicon-on-insulators (SOIs). We point out that control of the oxidation of Si is quite important and could be the key to their fabrication. We also introduce our technique for making single-electron transistors (SETs), which uses special phenomena that occur during the oxidation of SOIs, and show that the technique enables us to realize primary single-electron circuits as a result of its high controllability and high reproducibility.

Original language	English
Pages (from-to)	435-442
Number of pages	8
Journal	Microelectronic Engineering
Volume	59
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(01)00638-4
Publication status	Published - Nov 1 2001
Event	12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italy Duration: Jun 20 2001 → Jun 23 2001

Keywords

Oxidation
Quantum device
Silicon-on-insulator
Single-electron transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(01)00638-4

Cite this

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abstract = "This paper describes, from the viewpoint of device fabrication, single-electron and quantum devices using silicon-on-insulators (SOIs). We point out that control of the oxidation of Si is quite important and could be the key to their fabrication. We also introduce our technique for making single-electron transistors (SETs), which uses special phenomena that occur during the oxidation of SOIs, and show that the technique enables us to realize primary single-electron circuits as a result of its high controllability and high reproducibility.",

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T1 - Single-electron and quantum SOI devices

AU - Ono, Yukinori

AU - Yamazaki, Kenji

AU - Nagase, Masao

AU - Horiguchi, Seiji

AU - Shiraishi, Kenji

AU - Takahashi, Yasuo

PY - 2001/11/1

Y1 - 2001/11/1

N2 - This paper describes, from the viewpoint of device fabrication, single-electron and quantum devices using silicon-on-insulators (SOIs). We point out that control of the oxidation of Si is quite important and could be the key to their fabrication. We also introduce our technique for making single-electron transistors (SETs), which uses special phenomena that occur during the oxidation of SOIs, and show that the technique enables us to realize primary single-electron circuits as a result of its high controllability and high reproducibility.

AB - This paper describes, from the viewpoint of device fabrication, single-electron and quantum devices using silicon-on-insulators (SOIs). We point out that control of the oxidation of Si is quite important and could be the key to their fabrication. We also introduce our technique for making single-electron transistors (SETs), which uses special phenomena that occur during the oxidation of SOIs, and show that the technique enables us to realize primary single-electron circuits as a result of its high controllability and high reproducibility.

KW - Oxidation

KW - Quantum device

KW - Silicon-on-insulator

KW - Single-electron transistor

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DO - 10.1016/S0167-9317(01)00638-4

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EP - 442

JO - Microelectronic Engineering

JF - Microelectronic Engineering

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T2 - 12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001)

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ER -

Single-electron and quantum SOI devices

Abstract

Keywords

ASJC Scopus subject areas

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