Single-electron device using Si nanodot array and multi-input gates

Takuya Kaizawa; Masashi Arita; Akira Fujiwara; Kenji Yamazaki; Yukinori Ono; Hiroshi Inokawa; Yasuo Takahashi

doi:10.1109/ICSICT.2006.306681

Single-electron device using Si nanodot array and multi-input gates

Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi

Faculty of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We fabricated a single-electron device (SED) that has many nanodots. Oscillatory characteristics and multi-gate capabilities of SEDs were used to eliminate size fluctuation and achieve a high functionality. We fabricated a Si nanodot array device, which has two input gates and a control gate, and tested its basic operation characteristics experimentally. The device operates as a logic gate with selectable functions when the control gate voltage is changed. We demonstrated that the device exhibits five of six important logic functions.

Original language	English
Title of host publication	ICSICT-2006
Subtitle of host publication	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Publisher	IEEE Computer Society
Pages	1062-1064
Number of pages	3
ISBN (Print)	1424401615, 9781424401611
DOIs	https://doi.org/10.1109/ICSICT.2006.306681
Publication status	Published - Jan 1 2006
Event	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: Oct 23 2006 → Oct 26 2006

Publication series

Name	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	10/23/06 → 10/26/06

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICSICT.2006.306681

Cite this

Kaizawa, T., Arita, M., Fujiwara, A., Yamazaki, K., Ono, Y., Inokawa, H., & Takahashi, Y. (2006). Single-electron device using Si nanodot array and multi-input gates. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1062-1064). [4098322] (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306681

Single-electron device using Si nanodot array and multi-input gates. / Kaizawa, Takuya; Arita, Masashi; Fujiwara, Akira et al.

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 1062-1064 4098322 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kaizawa, T, Arita, M, Fujiwara, A, Yamazaki, K, Ono, Y, Inokawa, H & Takahashi, Y 2006, Single-electron device using Si nanodot array and multi-input gates. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098322, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, pp. 1062-1064, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 10/23/06. https://doi.org/10.1109/ICSICT.2006.306681

Kaizawa T, Arita M, Fujiwara A, Yamazaki K, Ono Y, Inokawa H et al. Single-electron device using Si nanodot array and multi-input gates. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 1062-1064. 4098322. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2006.306681

Kaizawa, Takuya ; Arita, Masashi ; Fujiwara, Akira et al. / Single-electron device using Si nanodot array and multi-input gates. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. pp. 1062-1064 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

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abstract = "We fabricated a single-electron device (SED) that has many nanodots. Oscillatory characteristics and multi-gate capabilities of SEDs were used to eliminate size fluctuation and achieve a high functionality. We fabricated a Si nanodot array device, which has two input gates and a control gate, and tested its basic operation characteristics experimentally. The device operates as a logic gate with selectable functions when the control gate voltage is changed. We demonstrated that the device exhibits five of six important logic functions.",

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AU - Ono, Yukinori

AU - Inokawa, Hiroshi

AU - Takahashi, Yasuo

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N2 - We fabricated a single-electron device (SED) that has many nanodots. Oscillatory characteristics and multi-gate capabilities of SEDs were used to eliminate size fluctuation and achieve a high functionality. We fabricated a Si nanodot array device, which has two input gates and a control gate, and tested its basic operation characteristics experimentally. The device operates as a logic gate with selectable functions when the control gate voltage is changed. We demonstrated that the device exhibits five of six important logic functions.

AB - We fabricated a single-electron device (SED) that has many nanodots. Oscillatory characteristics and multi-gate capabilities of SEDs were used to eliminate size fluctuation and achieve a high functionality. We fabricated a Si nanodot array device, which has two input gates and a control gate, and tested its basic operation characteristics experimentally. The device operates as a logic gate with selectable functions when the control gate voltage is changed. We demonstrated that the device exhibits five of six important logic functions.

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Single-electron device using Si nanodot array and multi-input gates

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