TY - JOUR
T1 - Solution-processed hybrid organic-inorganic complementary thin-film transistor inverter
AU - Cheong, Heajeong
AU - Kuribara, Kazunori
AU - Ogura, Shintaro
AU - Fukuda, Nobuko
AU - Yoshida, Manabu
AU - Ushijima, Hirobumi
AU - Uemura, Sei
N1 - Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/4
Y1 - 2016/4
N2 - We investigated hybrid organic-inorganic complementary inverters with a solution-processed indium-gallium-zinc-oxide (IGZO) n-channel thinfilm transistor (TFT) and p-channel TFTs using the high-uniformity polymer poly[2,5-bis(alkyl)pyrrolo[3,4-c]pyrrolo-1,4(2H,5H)-dione-alt-5,5- di(thiophene-2-yl)-2,2-(E)-2-(2-(thiophen-2-yl)vinyl)thiophene] (PDVT-10). The IGZO TFT was fabricated at 150 °C for 1 min. It showed a high field effect mobility of 0.9cm2.V-1-s-1 and a high on/off current ratio of 107. A hybrid complementary inverter was fabricated by combining IGZO with a PDVT-10 thin-film transistor and its operation was confirmed.
AB - We investigated hybrid organic-inorganic complementary inverters with a solution-processed indium-gallium-zinc-oxide (IGZO) n-channel thinfilm transistor (TFT) and p-channel TFTs using the high-uniformity polymer poly[2,5-bis(alkyl)pyrrolo[3,4-c]pyrrolo-1,4(2H,5H)-dione-alt-5,5- di(thiophene-2-yl)-2,2-(E)-2-(2-(thiophen-2-yl)vinyl)thiophene] (PDVT-10). The IGZO TFT was fabricated at 150 °C for 1 min. It showed a high field effect mobility of 0.9cm2.V-1-s-1 and a high on/off current ratio of 107. A hybrid complementary inverter was fabricated by combining IGZO with a PDVT-10 thin-film transistor and its operation was confirmed.
UR - http://www.scopus.com/inward/record.url?scp=84963682831&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84963682831&partnerID=8YFLogxK
U2 - 10.7567/JJAP.55.04EL04
DO - 10.7567/JJAP.55.04EL04
M3 - Article
AN - SCOPUS:84963682831
SN - 0021-4922
VL - 55
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 4
M1 - 04EL04
ER -