Solution-processed hybrid organic-inorganic complementary thin-film transistor inverter

Heajeong Cheong, Kazunori Kuribara, Shintaro Ogura, Nobuko Fukuda, Manabu Yoshida, Hirobumi Ushijima, Sei Uemura

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We investigated hybrid organic-inorganic complementary inverters with a solution-processed indium-gallium-zinc-oxide (IGZO) n-channel thinfilm transistor (TFT) and p-channel TFTs using the high-uniformity polymer poly[2,5-bis(alkyl)pyrrolo[3,4-c]pyrrolo-1,4(2H,5H)-dione-alt-5,5- di(thiophene-2-yl)-2,2-(E)-2-(2-(thiophen-2-yl)vinyl)thiophene] (PDVT-10). The IGZO TFT was fabricated at 150 °C for 1 min. It showed a high field effect mobility of 0.9cm2.V-1-s-1 and a high on/off current ratio of 107. A hybrid complementary inverter was fabricated by combining IGZO with a PDVT-10 thin-film transistor and its operation was confirmed.

Original languageEnglish
Article number04EL04
JournalJapanese journal of applied physics
Issue number4
Publication statusPublished - Apr 2016
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Solution-processed hybrid organic-inorganic complementary thin-film transistor inverter'. Together they form a unique fingerprint.

Cite this