Spin-coatable Al2O3 resists in electron beam nanolithography

M. S.M. Saifullah; H. Namatsu; T. Yamaguchi; K. Yamazaki; K. Kurihara

doi:10.1117/12.350248

Spin-coatable Al₂O₃ resists in electron beam nanolithography

M. S.M. Saifullah, H. Namatsu, T. Yamaguchi, K. Yamazaki, K. Kurihara

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

Inorganic resists such as amorphous alumina are projected as potential candidates for high resolution electron beam nanolithography, with drawbacks on low sensitivity and tedious deposition process such as sputtering. Therefore, a spin-coatable Al₂O₃ resist with higher sensitivity is strongly desirable to overcome these drawbacks. The electron beam exposure characteristics of spin-coatable Al₂O₃ gel films prepared by aluminum tri-secbutoxide, Al(OBu^s)₃, with chelating agents like ethylacetoacetate (EAcAc) are investigated.

Original language	English
Pages (from-to)	633-642
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3678
Issue number	I
DOIs	https://doi.org/10.1117/12.350248
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 Microlithography - Advances in Resist Technology and Processing XVI - Santa Clara, CA, USA Duration: Mar 15 1999 → Mar 17 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.350248

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title = "Spin-coatable Al2O3 resists in electron beam nanolithography",

abstract = "Inorganic resists such as amorphous alumina are projected as potential candidates for high resolution electron beam nanolithography, with drawbacks on low sensitivity and tedious deposition process such as sputtering. Therefore, a spin-coatable Al2O3 resist with higher sensitivity is strongly desirable to overcome these drawbacks. The electron beam exposure characteristics of spin-coatable Al2O3 gel films prepared by aluminum tri-secbutoxide, Al(OBus)3, with chelating agents like ethylacetoacetate (EAcAc) are investigated.",

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T1 - Spin-coatable Al2O3 resists in electron beam nanolithography

AU - Saifullah, M. S.M.

AU - Namatsu, H.

AU - Yamaguchi, T.

AU - Yamazaki, K.

AU - Kurihara, K.

PY - 1999

Y1 - 1999

N2 - Inorganic resists such as amorphous alumina are projected as potential candidates for high resolution electron beam nanolithography, with drawbacks on low sensitivity and tedious deposition process such as sputtering. Therefore, a spin-coatable Al2O3 resist with higher sensitivity is strongly desirable to overcome these drawbacks. The electron beam exposure characteristics of spin-coatable Al2O3 gel films prepared by aluminum tri-secbutoxide, Al(OBus)3, with chelating agents like ethylacetoacetate (EAcAc) are investigated.

AB - Inorganic resists such as amorphous alumina are projected as potential candidates for high resolution electron beam nanolithography, with drawbacks on low sensitivity and tedious deposition process such as sputtering. Therefore, a spin-coatable Al2O3 resist with higher sensitivity is strongly desirable to overcome these drawbacks. The electron beam exposure characteristics of spin-coatable Al2O3 gel films prepared by aluminum tri-secbutoxide, Al(OBus)3, with chelating agents like ethylacetoacetate (EAcAc) are investigated.

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DO - 10.1117/12.350248

M3 - Conference article

AN - SCOPUS:0032628395

SN - 0277-786X

VL - 3678

SP - 633

EP - 642

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

IS - I

T2 - Proceedings of the 1999 Microlithography - Advances in Resist Technology and Processing XVI

Y2 - 15 March 1999 through 17 March 1999

ER -

Spin-coatable Al₂O₃ resists in electron beam nanolithography

Abstract

ASJC Scopus subject areas

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