Stress-induced level shift of a hydrogen-carbon complex in silicon

Kazuhisa Fukuda, Yoichi Kamiura, Yoshifumi Yamashita, Takeshi Ishiyama

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We have studied the stress-induced shift of a deep level at Ec - 0.15 eV due to a hydrogen-carbon complex in Si using deep-level transient spectroscopy (DLTS) under uniaxial compressive stress. Linear stress dependencies of the ionization energy of the above level were observed for five components of split DLTS peaks altogether for <111>, <110> and <100> stresses. By subtracting the stress shifts of conduction band minima from the stress dependencies of ionization energy, the net stress shifts of the energy level were obtained. Two piezospectroscopic parameters, A1 and A2, were determined as approximately 4 and -9.5 meV/GPa, respectively. Considering a molecular-orbital schematic suggested here and throughout, we conclude that the stress-induced level shifts and the splits pattern of DLTS peaks reflect the trigonal symmetry and antibonding character of the electronic state of the complex. These properties are completely consistent with the atomic configuration in which a hydrogen atom occupies the bond-centered site between Si and C atoms.

Original languageEnglish
Pages (from-to)6700-6704
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number12
Publication statusPublished - Dec 2001


  • Carbon
  • DLTS
  • Hydrogen
  • Silicon
  • Uniaxial stress

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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