Stress-induced reorientation of the Pt-H2 complex in Si

K. Sato; Y. Kamiura; Y. Yamashita; T. Ishiyama

doi:10.1016/j.physb.2005.12.021

Stress-induced reorientation of the Pt-H₂ complex in Si

K. Sato, Y. Kamiura, Y. Yamashita, T. Ishiyama

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

We have studied stress-induced reorientation of the Pt-H₂ complex in Si using isothermal deep-level transient spectroscopy (IT-DLTS) technique under uniaxial compressive stress. We have found that the intensity ratio of split components of the IT-DLTS peak for various magnitudes of applied stress up to 0.4 GPa is described by a Boltzmann factor, where the activation energy is proportional to the magnitude of the applied stress. The proportional factor is connected to an element of the piezospectroscopic tensor.

Original language	English
Pages (from-to)	77-80
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.021
Publication status	Published - Apr 1 2006
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: Jul 24 2005 → Jul 29 2005

Keywords

DLTS
H
Pt
Si

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2005.12.021

Cite this

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title = "Stress-induced reorientation of the Pt-H2 complex in Si",

abstract = "We have studied stress-induced reorientation of the Pt-H2 complex in Si using isothermal deep-level transient spectroscopy (IT-DLTS) technique under uniaxial compressive stress. We have found that the intensity ratio of split components of the IT-DLTS peak for various magnitudes of applied stress up to 0.4 GPa is described by a Boltzmann factor, where the activation energy is proportional to the magnitude of the applied stress. The proportional factor is connected to an element of the piezospectroscopic tensor.",

keywords = "DLTS, H, Pt, Si",

author = "K. Sato and Y. Kamiura and Y. Yamashita and T. Ishiyama",

note = "Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research (No. 15340099) from the Ministry of Education, Culture, Sports, Science and Technology.; Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

year = "2006",

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doi = "10.1016/j.physb.2005.12.021",

language = "English",

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TY - JOUR

T1 - Stress-induced reorientation of the Pt-H2 complex in Si

AU - Sato, K.

AU - Kamiura, Y.

AU - Yamashita, Y.

AU - Ishiyama, T.

N1 - Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research (No. 15340099) from the Ministry of Education, Culture, Sports, Science and Technology.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - We have studied stress-induced reorientation of the Pt-H2 complex in Si using isothermal deep-level transient spectroscopy (IT-DLTS) technique under uniaxial compressive stress. We have found that the intensity ratio of split components of the IT-DLTS peak for various magnitudes of applied stress up to 0.4 GPa is described by a Boltzmann factor, where the activation energy is proportional to the magnitude of the applied stress. The proportional factor is connected to an element of the piezospectroscopic tensor.

AB - We have studied stress-induced reorientation of the Pt-H2 complex in Si using isothermal deep-level transient spectroscopy (IT-DLTS) technique under uniaxial compressive stress. We have found that the intensity ratio of split components of the IT-DLTS peak for various magnitudes of applied stress up to 0.4 GPa is described by a Boltzmann factor, where the activation energy is proportional to the magnitude of the applied stress. The proportional factor is connected to an element of the piezospectroscopic tensor.

KW - DLTS

KW - H

KW - Pt

KW - Si

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DO - 10.1016/j.physb.2005.12.021

M3 - Conference article

AN - SCOPUS:33645146603

SN - 0921-4526

VL - 376-377

SP - 77

EP - 80

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

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