Stress-induced reorientation of the Pt-H2 complex in Si

K. Sato, Y. Kamiura, Y. Yamashita, T. Ishiyama

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


We have studied stress-induced reorientation of the Pt-H2 complex in Si using isothermal deep-level transient spectroscopy (IT-DLTS) technique under uniaxial compressive stress. We have found that the intensity ratio of split components of the IT-DLTS peak for various magnitudes of applied stress up to 0.4 GPa is described by a Boltzmann factor, where the activation energy is proportional to the magnitude of the applied stress. The proportional factor is connected to an element of the piezospectroscopic tensor.

Original languageEnglish
Pages (from-to)77-80
Number of pages4
JournalPhysica B: Condensed Matter
Issue number1
Publication statusPublished - Apr 1 2006
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: Jul 24 2005Jul 29 2005


  • DLTS
  • H
  • Pt
  • Si

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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