TY - GEN
T1 - Stress measurement of carbon cluster implanted layers with in-plane diffraction technique
AU - Matsuo, Jiro
AU - Ichiki, Kazuya
AU - Hada, Masaki
AU - Ninomiya, Satoshi
AU - Seki, Toshio
AU - Aoki, Takaaki
AU - Nagayama, Tsutomu
AU - Tanjyo, Masayasu
PY - 2009/12/1
Y1 - 2009/12/1
N2 - Cluster ion implantation has a great potential for semiconductor manufacturing, such as ultra shallow junction formation and strain engineering of channel. Stress in Si implanted with carbon cluster ions (C7H 7) was much higher than that in Si implanted with carbon monomer ions. Multiple collisions of atoms occurred during cluster ion implantation, and a fully amorphized Si layer can be formed. The stress in the implanted layer strongly depends on the annealing condition. There are two different directions for the stress. One is parallel to the surface, which is usually measured with conventional X-ray diffraction. The other is perpendicular to the surface, which can be measured with in-plane X-ray diffraction technique. The stress perpendicular to the surface was about 50% of the stress parallel to the surface even after flash lamp annealing.
AB - Cluster ion implantation has a great potential for semiconductor manufacturing, such as ultra shallow junction formation and strain engineering of channel. Stress in Si implanted with carbon cluster ions (C7H 7) was much higher than that in Si implanted with carbon monomer ions. Multiple collisions of atoms occurred during cluster ion implantation, and a fully amorphized Si layer can be formed. The stress in the implanted layer strongly depends on the annealing condition. There are two different directions for the stress. One is parallel to the surface, which is usually measured with conventional X-ray diffraction. The other is perpendicular to the surface, which can be measured with in-plane X-ray diffraction technique. The stress perpendicular to the surface was about 50% of the stress parallel to the surface even after flash lamp annealing.
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U2 - 10.1109/IWJT.2009.5166225
DO - 10.1109/IWJT.2009.5166225
M3 - Conference contribution
AN - SCOPUS:77950149354
SN - 9781424439447
T3 - Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009
SP - 84
EP - 85
BT - Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009
T2 - 9th International Workshop on Junction Technology, IWJT 2009
Y2 - 11 June 2009 through 12 June 2009
ER -